Kopanski, J.
, Marchiando, J.
and Lowney, J.
(1996),
Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon, Journal of Vacuum Science and Technology
(Accessed January 2, 2025)
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Scanning Capacitance Microscopy Measurements and Modeling: Progress Towards Dopant Profiling of Silicon
Published
Author(s)
, ,
Citation
Journal of Vacuum Science and Technology
Volume
B 14
Issue
1
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created January 31, 1996, Updated October 12, 2021