Bouldin, C.
(1989),
EXAFS Study of a Buried Germanium Layer in Silicon, Physica (North-Holland, Amsterdam)
(Accessed November 8, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
EXAFS Study of a Buried Germanium Layer in Silicon
Published
Author(s)
Citation
Physica (North-Holland, Amsterdam)
Volume
B
Issue
158
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 1989, Updated February 17, 2017