{Umlat}nl{umlat}, M.
, Gvkkavas, M.
, Onat, B.
, Ata, E.
, Vzbay, E.
, Mirin, R.
, Knopp, K.
, Bertness, K.
and Christensen, D.
(1998),
High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=20727
(Accessed July 18, 2024)
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High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation
Published
Author(s)
M. S. {Umlat}nl{umlat}, M. Gvkkavas, B. M. Onat, E. Ata, E. Vzbay, , K. J. Knopp, ,
Abstract
High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs mate1ial system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry-Perot cavity. The detectors exhibit a peak quantum efficiency of Η=0.5 at λ=827 nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.Citation
Applied Physics Letters
Volume
72
Issue
21
Pub Type
Journals
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Created May 24, 1998, Updated October 12, 2021