Suehle, J.
(1999),
Ultra-Thin Film Dielectric Reliability Characterization, Proc., ASTM Conference on Gate Dielectric Integrity, Paris, FR
(Accessed March 13, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Ultra-Thin Film Dielectric Reliability Characterization
Published
Author(s)
Abstract
The reliability of gate oxides is becoming a critical concern as oxide thickness is scaled below 4 nm in future technology nodes. The breakdown detection algorithms in traditional reliability characterization techniques must be modified for very thin films that exhibit excessive tunneling currents and soft breakdown. It becomes essential to fully understand the physical mechanism(s) responsible for gate oxide wear-out and breakdown if reliability projections are based on the results of highly accelerated wafer-level GOI tests. Issues relating to the reliability testing of ultra-thin oxides are discussed with examples.Proceedings Title
Proc., ASTM Conference on Gate Dielectric Integrity
Conference Dates
January 15-17, 1999
Conference Location
Paris, FR
Conference Title
ASTM Conference on Gate Dielectric Integrity
Pub Type
Conferences
Keywords
accelerated stress tests, dielectric breakdown, gate oxide integrity, silicon dioxide
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created January 15, 1999, Updated February 17, 2017