Joseph J. Kopanski

Staff Education

B.S., Applied Physics, 1982 and M.S., Electrical Engineering, 1985 from Case Western Reserve University

Research Opportunities

Link to NRC Website: Open to U.S. citizens, with biannual deadlines of February 1 and August 1. Please contact me if you're interested in applying. We are interested in researchers with experience in scanned probe microscope instrumentation development, SPM applications to device and material characterization, COMSOL simulation and semiconductor processing.

Joseph Kopanski has been at NIST since 1985. His research interests are scanning probe techniques, such as scanning capacitance microscopy, scanning microwave microscopy, and scanning Kelvin force microscopy for electrical transport characterization of nanostructures and sub-surface imaging techniques for back end of the line characterization. In his time at NIST, he has been both a Project Leader and a Group Leader. He retired from Federal Service in February 2023 and is currently a Research Associate.

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Publications

Die-Level Micrometers-Deep Subsurface Imaging for Fault Isolation Using Remote Bias Induced Electrostatic Force Microscopy

October 30, 2022

Author(s)

Evgheni Strelcov, Lin You, Yaw S. Obeng, Joseph J. Kopanski

In recent years, scanning probe microscopy (SPM) has drawn substantial attention for subsurface imaging, since the ultra-sharp AFM tip (≈10 nm in radius) can

Towards the Physical Reliability of 3D-Integrated Systems: Broadband Dielectric Spectroscopic (BDS) Studies of Material Evolution and Reliability in Integrated Systems

September 30, 2022

Author(s)

Papa Amoah, Joseph J. Kopanski, Yaw S. Obeng, Christopher Sunday, Chukwudi Okoro, Lin You, Dmirty Veksler

In this paper, we present an overview of our current research focus in developing non-destructive metrology for monitoring reliability issues in 3D-integrated

Deterministic Tagging Technology for Device Authentication

September 16, 2021

Author(s)

Jungjoon Ahn, Joseph J. Kopanski, Yaw S. Obeng, Jihong Kim

This paper discusses the development of a rapid, large-scale integration of deterministic dopant placement technique for encoding information in physical

Electric Field Gradient Reference Material for Scanning Probe Microscopy

March 31, 2019

Author(s)

Joseph Kopanski, Lin You

Any eSPM measurement of a spatially varying electric field at the surface of a sample has a large uncertainty due to the unknown details of the tip shape near

Probe assisted localized doping of aluminum into silicon substrates

February 20, 2019

Author(s)

Jungjoon Ahn, Santiago D. Solares, Lin You, Hanaul Noh, Joseph Kopanski, Yaw S. Obeng

In this paper, we demonstrate AFM probe assisted deterministic doping (PADD) of Al into an n- type Si (100) wafer, to generate nanoscale counter-doped junctions

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Patents (2018-Present)

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Authentication Article and Process for Making Same

NIST Inventors

Yaw S. Obeng and Joseph J. Kopanski

An authentication article includes: a substrate including: a first surface; a second surface disposed laterally to the first surface and at a depth below the first surface; and a plurality of indentations including the depth at the second surface of the substrate; and an array disposed on the

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Staff Education

B.S., Applied Physics, 1982 and M.S., Electrical Engineering, 1985 from Case Western Reserve University

Joseph J. Kopanski (Assoc)

Publications

Patents (2018-Present)