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Metrology for Nanoimprint Lithography

Summary

 

Our goal is to develop, advance, and demonstrate measurements that facilitate Nanoimprint Lithography (NIL) as a viable technology for the patterning of robust, reliable, and functional nanostructures with dimensions smaller than 25 nm. These measurements will be critical as NIL transitions from a novel laboratory patterning technique to a commercial nanomanufacturing method for applications as diverse as semiconductors, patterned data storage media, high brightness light emitting diodes (LEDs), and other emerging forms of nanotechnology. 

Description

 

Nanoimprint Lithography (NIL) was originally perceived as a versatile, low-cost, and high-resolution patterning alternative for optical lithography in CMOS fabrication. However, it is becoming apparent that NIL has great potential for nanotechnology in general. It is capable of patterning sub-10 nm features directly into a range of materials, even functional materials, and not just sacrificial resist formulations. Intense R&D activities are currently centered on CMOS logic devices, bit patterned data storage media, high brightness LEDs, patterned biological devices, and optical devices. Our approach is to develop measurement platforms that quantify the quality of the pattern or feature that has been fabricated by NIL. These quantitative assessments of the imprint process are necessary inputs to optimize the NIL based R&D processes and move from the novel demonstrations or devices in the lab to the high volume nanomanufacturing required for commercialization. To accomplish this we leverage our internal expertise in accurately measuring physical shape and properties at the nanoscale. The way that the NIL process itself influence both the shape and properties of the imprinted materials has a profound impact on the performance, robustness and quality of the imprinted device. By providing the measurement component of the processing-properties-structure paradigm, we can accelerate the development of products based on the NIL technology.

Major Accomplishments

  • The target for NIL patterning is expanding from semiconductors devices to a range of technologies where nanoscale patterning has yet to be realized, including data storage media, high brightness LEDs, displays, sensors, and lab on a chip devices.
  • NIST has emerged, in the face of diverging interests within the NIL community, as leaders in the materials and metrology needs for this rapidly expanding technology. We lead panel discussions and present numerous plenary/invited lectures on this topic at major conferences.
  • NIST measurements of the residual stresses in the NIL process provide seminal insight for developing roll-to-roll imprint processes, spawning worldwide interest by several other research groups.
  • First demonstration of the direct patterning of functional, ultralow-k dielectric insulator materials. Our measurements quantify the fidelity of the pattern transfer process and the unique way in which the NIL processes affect the porosity characteristics critical to the application.

Created October 24, 2008, Updated March 26, 2025