Patrone, P.
, Caflisch, R.
and Margetis, D.
(2012),
Characterizing Equilibrium in Epitaxial Growth, Europhysics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=909660
(Accessed October 31, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Characterizing Equilibrium in Epitaxial Growth
Published
Author(s)
, Russel Caflisch, Dionisios Margetis
Abstract
Using a kinetic model of epitaxial growth, we describe how geometry controls kinetic pathways through which external deposition influences the state of a vicinal surface. The state of the surface is determined by three key, adjustable parameters: the local step angle, Peclet number P, and single bond detachment rate b. By scaling arguments in P, we find three steady state regimes: In one regime, detailed balance approximately holds, so that the system is near equilibrium. In the other two regimes, geometric e ffects compete with deposition as the system is driven progressively out of equilibrium. Our analytical results are in excellent agreement with those of kinetic Monte Carlo simulations.Citation
Europhysics Letters
Volume
97
Issue
4
Pub Type
Journals
Download Paper
Keywords
Kinetic Steady state, detailed balance, epitaxial growth, geometric control
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created February 20, 2012, Updated February 19, 2017