Controlled Synthesis of Single-Crystalline InN Nanorods

Published

February 19, 2017

Author(s)

Igor Levin, Albert Davydov, O M. Kryliouk, Hyun Jong Park, YongSun Won, T J. Anderson, J P. Kim, J A. Freitas

Abstract

Single-crystalline InN nanorods were successfully grown on c-Al203, GaN, and Si substrates by non catalytic, template-free hydride metal-organic vapor phase epitaxy (H-MOVPE). Stable gas-phase oligomer formation is proposed as the nucleation mechanism for InN nanoparticle generation. It was evaluated thermodynamically and confirmed experimentally that the growth of nanorods occurs at the growth-etch transition region. Dislocation-free high quality InN nanorods with [00.1] growth axis were formed via the solid-vapor growth mechanism. Growth parameters and optimal growth conditions were determined. The nanorods diameter, density and orientation were controlled using growth temperature, substrate selection, HCI/TMI and V/III ratios. Extensive studies of the nanorods were performed by FESEM, XRD, TEM, EDS, and Raman scattering.

Citation

Nano Letters

Pub Type

Journals

Keywords

growth, nanowire, nitride, semiconductor

Citation

Levin, I. , Davydov, A. , Kryliouk, O. , Park, H. , Won, Y. , Anderson, T. , Kim, J. and Freitas, J. (2017), Controlled Synthesis of Single-Crystalline InN Nanorods, Nano Letters (Accessed October 12, 2025)