Chen, Y.
, Suehle, J.
, Shen, C.
, Bernstein, J.
, Messick, C.
and Chaparala, P.
(1998),
The Correlation of Highly Accelerated Q<sub>bd</sub> Tests to TDDB Life Tests for Ultra-Thin Gate Oxides, Proc., 1998 International Reliability Physics Symposium, Reno, NV, USA
(Accessed October 13, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
The Correlation of Highly Accelerated Qbd Tests to TDDB Life Tests for Ultra-Thin Gate Oxides
Published
Author(s)
Y Chen, , Chien-Chung Shen, J B. Bernstein, C. Messick, P Chaparala
Abstract
A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.Proceedings Title
Proc., 1998 International Reliability Physics Symposium
Conference Dates
March 30-April 2, 1998
Conference Location
Reno, NV, USA
Pub Type
Conferences
Keywords
oxide reliability, silicon dioxide, time-dependent dielectric breakdown
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created May 31, 1998, Updated October 12, 2021