Defect Generation in Ultra-thin Oxide Over Large Fluence Range

Published

October 21, 2002

Author(s)

Da-Wei Heh, Eric M. Vogel, J B. Bernstein

Abstract

The defect generation rate (P_g) during constant voltage stress is investigated by using short-time voltage pulses over large fluence range. It is found that P_g is not constant as a function of injected charge and the voltage acceleration of P_g in the linear defect generation regime is similar to that of the reciprocal of QBD. The change of carrier capture cross (sigma) during defect generation was speculated as one of the reasons responsible for the change of P_g value. However, from this preliminary report, we have determined that the change of P_g can not be explained by the change of sigma.

Proceedings Title

Proc., IEEE International Integrated Reliability Workshop

Conference Dates

October 21-24, 2002

Conference Location

Lake Tahoe, CA, USA

Conference Title

IEEE International Integrated Reliability Workshop

Pub Type

Conferences

Keywords

capture cross section, charge pumping, non-linear, P_g, pulse stress

Citation

Heh, D. , Vogel, E. and Bernstein, J. (2002), Defect Generation in Ultra-thin Oxide Over Large Fluence Range, Proc., IEEE International Integrated Reliability Workshop, Lake Tahoe, CA, USA (Accessed January 2, 2025)