Li, S.
(1977),
The dopant density and temperature dependence of electron mobility and resistivity in N-type silicon:, , National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NBS.SP.400-33
(Accessed January 15, 2025)
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The dopant density and temperature dependence of electron mobility and resistivity in N-type silicon:
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- NBS SP 400-33
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NBS SP 400-33
Pub Type
NIST Pubs
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Created January 1, 1977, Updated May 19, 2023