Effectiveness of AlN Encapsulate in Annealing Ion-Implanted SiC

Published

July 1, 1999

Author(s)

E Handy, M V. Rao, K A. Jones, M A. Derenge, P Chi, R D. Vispute, T Venkatesan, N A. Papanicolaou, J Mittereder

Abstract

Aluminum nitride (AlN) has been used as an encapsulate for annealing nitrogen (N), arsenic (As), antimony (Sb), aluminum (Al), and boron (B) ion-implanted 6H-SiC. Atomic force microscopy (AFM) has revealed that the AlN encapsulate prevents the formation of long grooves on the SiC surface that are observed if the AlN encapsulate is not used, for annealing cycles up to 1600 C for 15 min. Secondary ion mass spectrometry measurements indicated that the AlN encapsulate is effective in preventing the out-diffusion of As and Sb implants, but could not stop the out-diffusion of the B implants. Electrical characterization reveals activation of N, As, Sb, and Al implants when annealed with an AlN encapsulate comparable to the best activation achieved without AlN.

Citation

Journal of Applied Physics

Volume

86

Issue

No. 2

Pub Type

Journals

Keywords

AFM, AlN encapsulate, diffusion, ion implantation, silicon carbide, SIMS

Citation

Handy, E. , Rao, M. , Jones, K. , Derenge, M. , Chi, P. , Vispute, R. , Venkatesan, T. , Papanicolaou, N. and Mittereder, J. (1999), Effectiveness of AlN Encapsulate in Annealing Ion-Implanted SiC, Journal of Applied Physics (Accessed October 31, 2024)