Blackburn, D.
(1992),
Failure Mechanisms and Nondestructive Testing of Power Bipolar and MOS-Gated Transistors, Proc., EPE - MADEP '91 Symposium on Materials and Devices for Power Electronics, Florence, IT
(Accessed November 8, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Failure Mechanisms and Nondestructive Testing of Power Bipolar and MOS-Gated Transistors
Published
Author(s)
Proceedings Title
Proc., EPE - MADEP '91 Symposium on Materials and Devices for Power Electronics
Issue
6
Conference Dates
September 2-6, 1991
Conference Location
Florence, IT
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created September 1, 1992, Updated February 17, 2017