Frontiers of Analytical Metrology for the Silicon Semiconductor Industry

Published

February 1, 2001

Author(s)

Thomas J. Shaffner, David G. Seiler

Abstract

The grand challenges of the National Technology Roadmap for Semiconductors include affordable scaling, new materials and structures, and yield and reliability. While these encapsulate the high-level perspective and needs of the industry as a whole, there is often a nebulous link at best between the challenges and the detailed operational plans of the practicing analytical metrologist. It is proposed that drivers are the motive force that is understood both by top managers as well as specialists. Drivers offer a simple bridge for better understanding the path-to-impact. This idea is illustrated using examples of frontier analytical techniques, including electron microscopy, optical methods, focused ion beam milling, the atom probe, secondary ion mass spectrometry, X-ray diffraction and others. The newest techniques that address more than one driver are more likely to be adopted for applications within the fab.

Citation

Electronic Device Failure Analysis

Volume

3

Issue

1

Pub Type

Journals

Keywords

analytical techniques, atom probe, drivers, grand challenges, characterization, electron microscopy, FIB, metrology, NSOM

Citation

Shaffner, T. and Seiler, D. (2001), Frontiers of Analytical Metrology for the Silicon Semiconductor Industry, Electronic Device Failure Analysis (Accessed October 31, 2024)