Interconnect Fabrication by Superconformal Iodine-Catalyzed Chemical Vapor

Published

April 3, 2003

Author(s)

Daniel Josell, S D. Kim, Daniel Wheeler, Thomas P. Moffat, S G. Pyo

Abstract

The mechanism behind superconformal filling of fine features during surfactant catalyzed chemical vapor deposition is described and the metrology required to predict it is identified and quantified. The impact of adsorbed iodine coverage on copper deposition rate during chemical vapor deposition of copper on planar substrates is first determined. These kinetic parameters are then used in a model based on the curvature enhanced accelerator coverage (CEAC) mechanism to predict superconformal filling during iodine-catalyzed chemical vapor deposition. In this model, the coverage of the adsorbed catalyst is presumed to change with surface area during interface evolution. The surface area decreases along the bottoms of submicrometer dimension features, increasing the local coverage and depostion rates and thereby enabling superconformal filling. Experimental filling results are then described and shown to be consistent with the predictions.

Citation

Journal of the Electrochemical Society

Volume

150

Issue

5

Pub Type

Journals

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Keywords

chemical vapor deposition, copper, CVD, superconformal, superfill

Citation

Josell, D. , Kim, S. , Wheeler, D. , Moffat, T. and Pyo, S. (2003), Interconnect Fabrication by Superconformal Iodine-Catalyzed Chemical Vapor, Journal of the Electrochemical Society, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=853177 (Accessed January 2, 2025)