Metrology for High-Frequency Nanoelectronics

Published

March 27, 2007

Author(s)

Thomas Mitchell (Mitch) Wallis, Atif A. Imtiaz, Hans Nembach, Paul Rice, Pavel Kabos

Abstract

Two metrological tools for high frequency measurements of nanoscale systems are described: (i) tow/N-port analysis of nanoscale devices as well as (ii) near-field scanning microwave microscopy (NSMM) for materials characterization. Calibrated two/N-port measurements were made on multiwalled carbon nanotubes (NWNT) welded to a coplanar waveguide. Significant changes inthe extracted high-frequency electrical response of the welded NWNT were measured when the contacts to the MWNT were modified. dditionally, NSMM was used to characterize films of nanotube soot deposited on copper and sapphire substrates. The material properties of the films showed a strong dependence on the substrate material.

Conference Dates

March 27-29, 2007

Conference Location

Gaithersburg, MD, USA

Conference Title

2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (formerly titled Characterization and Metrology for ULSI Technology)

Pub Type

Conferences

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Keywords

Radio frequency nanoelectronics, near-field electromagnetics, carbon nanotubes, scanning probe microscopy, microwaves, calibration

Citation

Wallis, T. , Imtiaz, A. , Nembach, H. , Rice, P. and Kabos, P. (2007), Metrology for High-Frequency Nanoelectronics, 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (formerly titled Characterization and Metrology for ULSI Technology), Gaithersburg, MD, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32626 (Accessed December 26, 2024)