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This chapter provides a survey and discussion of the electrical characterization techniques commonly used to determine the material, performance, and reliability properties of state-of-the-art metal-oxide-semiconductor (MOS) devices used in silicon semiconductor technology. The chapter is not intended as a comprehensive review of all electrical characterization techniques. Instead, the intent is to describe the electrical characterization techniques most common and directly relevant to fabricating and integrating high-performance, state-of-the-art MOS devices.