Campbell, J.
, Cheung, K.
, Suehle, J.
and Oates, A.
(2008),
Negative-Bias Temperature Instability Induced Electron Trapping, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33034
(Accessed December 26, 2024)
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Negative-Bias Temperature Instability Induced Electron Trapping
Published
Author(s)
, , , A Oates
Abstract
Despite four decades of research, the physics responsible for the negative bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect-transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole trapping/de-trapping mechanism or hydrogen depassivation mechanism. In this study, we present NBTI-induced changes in the peak transconductance which indicate the presence of a third mechanism involving electron trapping/de-trapping. The presence of this electron trapping/de-trapping component adds further complexity to the very complicated NBTI phenomenon.Citation
Applied Physics Letters
Pub Type
Journals
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Keywords
negative-bias temperature instability, electron trapping, hole trapping
Citation
Issues
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Created July 21, 2008, Updated February 19, 2017