A New Technique to Extract TDDB Acceleration Parameters From Fast Qbd Tests

Published

December 31, 1998

Author(s)

Y Chen, John S. Suehle, B. Shen, J B. Bernstein, C. Messick, P Chaparala

Abstract

A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant current injection breakdown tests. This is the first time that an accurate correlation of the highly accelerated breakdown tests to long-term TDDB tests has been presented.

Proceedings Title

Proc., 1997 Integrated Reliability Workshop

Conference Dates

October 13-16, 1997

Conference Location

Lake Tahoe, CA, USA

Pub Type

Conferences

Keywords

charge-to-breakdown, dielectric breakdown, gate oxide, reliability

Citation

Chen, Y. , Suehle, J. , Shen, B. , Bernstein, J. , Messick, C. and Chaparala, P. (1998), A New Technique to Extract TDDB Acceleration Parameters From Fast Q_bd Tests, Proc., 1997 Integrated Reliability Workshop, Lake Tahoe, CA, USA (Accessed December 21, 2024)