An, Y.
and Cundiff, S.
(2003),
Phase Inversion in Rotational-Anisotropy of Second Harmonic Generation at Si(001) Interfaces, Physical Review B (Condensed Matter and Materials Physics)
(Accessed July 27, 2024)
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Phase Inversion in Rotational-Anisotropy of Second Harmonic Generation at Si(001) Interfaces
Published
Author(s)
Y Q. An,
Abstract
The phase of the azimuthal dependence of second harmonic generation from Si(001) interfaces is observed to undergo an inversion for the correct polarization configurations. The azimuthal dependence is due to interference between second harmonic generation from bulk anaisotropic tensor elements and isotropic elements, which include both bulk and surface terms. The inversion can be induced by either varying the photon energy or by surface modification. In the former case, the inversion is ascribed to the presence of a resonance in the surface contribution and enhances the ability to identify resonance positions. The inversion due to surface modification can be explained in terms of the polarity of the interface bonds.Citation
Physical Review B (Condensed Matter and Materials Physics)
Volume
67
Issue
No. 19
Pub Type
Journals
Keywords
phase inversion, second harmonic generation, silicon
Citation
Issues
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Created February 28, 2003, Updated October 12, 2021