Photomask Linewidth Comparison by PTB and NIST

Published

November 2, 2015

Author(s)

Detleff Bergmann, Bernd Bodermann, Harald Bosse, Egbert Buhr, Gaoliang Dai, Ronald G. Dixson, W H?er-Grohne

Abstract

We report the initial results of a recent bilateral comparison of linewidth or critical dimension (CD) calibrations on photo-mask line features between two national metrology institutes (NMIs): the National Institute of Standards and Technology (NIST) in the United States and the Physikalisch-Technische Bundesanstalt (PTB) in Germany. For the comparison, a chrome on glass (CoG) photomask was used which has a layout of line features down to 100 nm nominal size. Different measurement methods were used at both institutes. These included: critical dimension atomic force microscopy (CD-AFM), CD scanning electron microscopy (CD-SEM) and ultraviolet (UV) transmission optical microscopy. The measurands are CD at 50 % height of the features as well as sidewall angle and line width roughness (LWR) of the features. On the isolated opaque features, we found agreement of the CD measurements at the 3 nm to 5 nm level on most features - usually within the combined expanded uncertainties of the measurements.

Proceedings Title

SPIE Proceedings: Scanning Microscopies 2015

Volume

9636

Conference Dates

September 29-October 1, 2015

Conference Location

Monterey, CA, US

Conference Title

Scanning Microscopies 2015

Pub Type

Conferences

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DOI Link

Keywords

linewidth, CD metrology, uncertainty components, Nano1, international comparison, MRA, photomask

Citation

Bergmann, D. , Bodermann, B. , Bosse, H. , Buhr, E. , Dai, G. , Dixson, R. and H?er-Grohne, W. (2015), Photomask Linewidth Comparison by PTB and NIST, SPIE Proceedings: Scanning Microscopies 2015, Monterey, CA, US, [online], https://doi.org/10.1117/12.2199453 (Accessed October 31, 2024)