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Displaying 326 - 350 of 718

Semiconductor-based detectors

December 13, 2013
Author(s)
Sergio Cova, Massimo Ghioni, Mark A. Itzler, Joshua Bienfang, Alessandro Restelli
There is nowadays a widespread and growing interest in low-level light detection and imaging. This interest is driven by the need for high sensitivity in various scientific and industrial applications such as fluorescence spectroscopy in life and material

Dielectrophoretic Trapping of P19 Cells on Indium Tin Oxide based Microelectrode Arrays

November 8, 2013
Author(s)
Aveek Gangopadhyay, Saugandhika Minnikanti, Darwin Reyes-Hernandez, Mulpuri V. Rao, Nathalia Peixoto
A microfabricated device comprised of a microelectrode array (MEA) and a microfluidic channel is presented here for the purpose of trapping cells using positive dielectrophoresis (DEP). Transparent indium tin oxide (ITO) electrodes are patterned in an

Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy

October 25, 2013
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M. Silver, Abraham Arceo
Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-resolved

Frictional properties of native and functionalized type I collagen thin films

October 2, 2013
Author(s)
Koo-hyun Chung, Antony Chen, Christopher Anderton, Kiran Bhadriraju, Anne L. Plant, Brian G. Bush, Robert F. Cook, Frank W. DelRio
Frictional properties of native and fibronectin (FN)-functionalized type I collagen (COL) thin films were studied via atomic force microscopy. The COL lateral contact stiffness was dependent only on the hydration state, indicating that shear deformation

Unexpected effect of thermal storage observed on SiC power DMOSFET

September 29, 2013
Author(s)
Zakariae Chbili, Pragya R. Shrestha, Jason P. Campbell, John S. Suehle, Kin P. Cheung, D. E. Ioannou
In this paper we report an unexpected improvement in the SiC DMOSFET transistor characteristics after a long temperature treatment at 150 C. The evolution of the device characteristics during a TDDB stress is compared to that after an elevated temperature

Fourier Domain Optical Tool Normalization for Quantitative Parametric Image Reconstruction

September 5, 2013
Author(s)
Jing Qin, Richard M. Silver, Bryan M. Barnes, Hui Zhou, Francois R. Goasmat
There has been much recent work in developing advanced optical metrology methods that use imaging optics for critical dimension measurements and defect detection. Sensitivity to nanometer scale changes has been observed when measuring critical dimensions

Analysis of Implanted Silicon Dopant Profiles

September 1, 2013
Author(s)
B. P. Geiser, Eric B. Steel, Karen T. Henry, D. Olson, T.J. Prosa
Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (As implant). Efforts were taken to manufacture specimens with limited variation in size and shape to minimize

A Prescription for Sub-Millimeter-Wave Transistor Characterization

July 1, 2013
Author(s)
Dylan F. Williams, Adam C. Young, Urteaga Miguel
We present an approach for characterizing transistors embedded in microstrip lines formed on a thin bisbenzocyclobutene-based (BCB) monomers film at sub-millimeter-wave frequencies. We demonstrate the approach to 750 GHz and estimate the uncertainty of the

Calibration-Kit Design for Millimeter-Wave Silicon Integrated Circuits

July 1, 2013
Author(s)
Dylan F. Williams, Phillip Corson, Sharma Jahnavi, Krishnaswamy Harish, Tai Wei, George Zacharias, Ricketts David, Watson Paul, Dacquay Eric, Voinigescu Sorin
We study and present design guidelines for thru-reflect-line vector-network-analyzer calibration kits used for characterizing circuits and transistors fabricated on silicon integrated circuits at millimeter-wave frequencies. We compare contact-pad designs

Harnessing 3D Scattered Optical Fields for sub-20 nm Defect Detection

June 24, 2013
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Richard M. Silver, Abraham Arceo
Experimental imaging at =193 nm of sub-resolved defects performed at several focus positions yields a volume of spatial and intensity data. Defects are located in a differential volume, given a reference, with up to 5x increase in sensitivity.

The Impact of Characteristic Impedance on Waveform Calibrations

June 7, 2013
Author(s)
Dylan F. Williams, Jeffrey A. Jargon, Paul D. Hale
We examine the impact of the characteristic impedance on mismatch corrections for temporal waveform calibrations based on high-speed electro-optic sampling measurements. We show that failing to measure and account for the characteristic impedance of

Effect of Organic SAMs on the Evolution of Strength of Silicon Nanostructures

June 3, 2013
Author(s)
Scott Grutzik, Brian G. Bush, Frank W. DelRio, Richard S. Gates, Melissa Hines, Alan Zehnder
The ability to accurately predict the strength of nanoscale, single crystal structures is critical in micro- and nano-electromechanical systems (MEMS and NEMS) design. Because of the small length scales involved failure does not always follow the same

Accelerated Stress Test Assessment of Through-Silicon Vias Using RF Signals

June 1, 2013
Author(s)
Chukwudi A. Okoro, Pavel Kabos, Jan Obrzut, Klaus Hummler, Yaw S. Obeng
In this work, radio frequency (RF) signal is demonstrated as an effective metrology tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity of TSV daisy

Reliability Monitoring For Highly Leaky Devices

May 31, 2013
Author(s)
Jason T. Ryan, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Richard Southwick, Anthony Oates
We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP signals

Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis

May 28, 2013
Author(s)
Chukwudi A. Okoro, Yaw S. Obeng, Jan Obrzut, Pavel Kabos, Klaus Hummler
In this work, we used radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity in
Displaying 326 - 350 of 718