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Displaying 3601 - 3625 of 74638

Application of -Fe203 Bottom GMR Spin-Valve for Magnetoresistive Random Access Memory (MRAM)

October 12, 2021
Author(s)
S E. Bae, William F. Egelhoff Jr., P J. Chen, S Zurn, L Sheppard, E J. Torok, J H. Judy
The possibility of the application of -Fe203 bottom GMR spin-valve for magnetoresistive random access memory (MRAM) device has been investigated for the first time from the point view of magnetic properties of spin-valve, device fabrication, and thermal

Applications of Giant Magnetoresitance Spin-Valve Transpinnor for Magneto-Electronics

October 12, 2021
Author(s)
S E. Bae, S Zurn, William F. Egelhoff Jr., P J. Chen, E J. Torok, R Spitzer, J H. Judy
This paper discusses the applications of a Transpinnor, a new kind of active solid-state device utilizing giant magnetoresitance (GMR) spin valves, for the state of art of magneto-electronic device technology. A Transpinnor is a modified Wheatstone bridge

Arrhenius-like Temperature Dependence of the Segmental Relaxation below T g

October 12, 2021
Author(s)
P A. O'Connell, G B. McKenna
In a recent paper DiMarzio and Yang [J. Res. Natl. Inst. Stds. Technol., 102, 135 (1997)] predicted that transport properties such as viscosity and diffusion coefficient do not follow the typical WLF- or Vogel-Fulcher-type of temperature dependence as the

Arsenic and Antimony Implantations in SiC

October 12, 2021
Author(s)
J R. Tucker, M Rao, O W. Holland, P Chi, N A. Papanicolaou, J A. Freitas
Single and multiple energy As and Sb implantations were performed into p-type 6H-SiC epitaxial layers at room temperature (RT) and 800 degrees C. Secondary ion mass spectrometry measurements showed severe out-diffusion of the implants for annealing

Artifacts That Could Be Misinterpreted as Ballistic Magnetoresistance

October 12, 2021
Author(s)
William F. Egelhoff Jr., L Gan, Erik B. Svedberg, Cedric J. Powell, Alexander J. Shapiro, Robert McMichael, J Mallett, Thomas P. Moffat, Mark D. Stiles
Theoretical physics suggests that very large magnetoresistance (MR) values might be found in certain magnetic nanocontacts if a magnetic domain wall could be localized in them with a length scale that would allow conduction electrons to transit the wall

Asymmetric Enhanced Intermixing in Co/Ti Bilayer

October 12, 2021
Author(s)
P Sule, L Kotis, L Toth, M. Menyhard, William F. Egelhoff Jr.
Low-energy ion-beam intermixing has been studied by Auger depth profiling and by molecular dynamics simulations in Co/Ti and Ti/Co bilayers. The agreement between theory and experiment is satisfactory. Both of them suggest the occurrence of the asymmetry

Atomic Transition Probabilities for DyI and DyII

October 12, 2021
Author(s)
M E. Wickliffe, James E. Lawler, Gillian Nave
Atomic transition probabilities for 915 spectral lines of neutral and singly ionized dysprosium are reported. Typical uncertainties are less than +/- 10%. Branching fractions, measured using the 1.0 m Fourier transform spectrometer (FTS) at the National

Atomistic Insights into Disclocation Dynamics in Metal Forming

October 12, 2021
Author(s)
Francesca Tavazza, Anne M. Chaka, Lyle E. Levine
Almost all of the mechanical behavior changes that occur during plastic deformation result from the evolution of dislocation structures. Statistical models, like strain percolation theory, have been developed to understand the transport of dislocations

Barium Strontium Titaanate Thin Film Analysis

October 12, 2021
Author(s)
T Remmel, R Deslattes, S Fujimura, H Honma, H Kobayashi, H Kohno, S M. Owens, J Pedulla, M Schulberg
Barium Strontium Titanate (BST) is under consideration as a high dielectric constant material for a number of semiconductor applications. Because of its very large dielectric constant, BST is seen as an enabling material that will allow the continual

Benchmark Gauging System for a Small-Scale Liquid Hydrogen Tank

October 12, 2021
Author(s)
N T. Van Dresar, James D. Siegwarth
A system to accurately weigh the fluid contents of a small-scale liquid hydrogen test tank has been experimentally verified. It is intended for use as a reference or benchmark system when testing low-gravity liquid quantity gauging concepts in the

Blackbody Radiation Shift in a 43 Ca + Ion Optical Frequency Standard

October 12, 2021
Author(s)
B Arora, M S. Safronova, Charles W. Clark
Motivated by the prospect of an optical frequency standard based on 43Ca+, we calculate the blackbody radiation (BBR) shift of the 4s1/2 - 3d5/2 clock transition, which is a major component of the uncertainty budget. The calculations are based on the

Broadband Dielectric Measurement of Liquids

October 12, 2021
Author(s)
James R. Baker-Jarvis, Michael D. Janezic, Jerzy Krupka
In this paper we report on the measurement of the dielectric properties of liquids using two methods. When combined, these methods can yield broadband, high-accuracy measurements of liquids from megahertz to gigahertz frequencies. These methods are the

Bulk-Like Properties Observed From High Density GaN Nanocolumns Grown by Molecular Beam Epitaxy

October 12, 2021
Author(s)
J E. Van Nostrand, R Cortez, J Boecki, J D. Albrecht, C E. Stutz, K L. Averett, Norman Sanford, Albert Davydov
Vertical GaN nanocolumns (NCs) having a width of 90+10 nm and a length of the film thickness were grown by plasma-assisted molecular beam epitaxy on Al_subscript 2)O_subscript 3} (0001). Low temperature photo-luminescence measurements of NC films results

c-Axis Oriented Epitaxial BaTiO 3 Films on (001) Si

October 12, 2021
Author(s)
V Vaithyanathan, J Lettieri, W Tian, A Kochhar, H Ma, A Sharan, A Vasudevarao, J. A. Aust, Y Li, Long-Qing Chen, P Zschack, Joseph Woicik
c-axis oriented epitaxial films of the ferroelectric BaTiO3 have been grown on (001) Si by reactive molecular-beam epitaxy (MBE). The orientation relationship between the film and substrate is (001) BaTiO3 // (001) Si and [100] BaTiO3 // [110] Si. The
Displaying 3601 - 3625 of 74638