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Displaying 376 - 400 of 655

Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

June 11, 2003
Author(s)
Ty R. McNutt, Allen R. Hefner Jr., Alan Mantooth, David W. Berning, Sei-Hyung Ryu
A compact circuit simulator model is used to describe the performance of a 2000-V, 5-A 4-H Silicon Carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Silicon (Si) power MOSFET. The model's

Microwave Surface Impedance and Nonlinear Properties of MgB 2 Films

June 1, 2003
Author(s)
James Booth, Sang Y. Lee, Kenneth Leong, J. H. Lee, J. Lim, H. N. Lee, S. H. Moon, B. Oh
We have measured the temperature dependence of the microwave surface impedance and the nonlinear response of high-quality MgB 2 films on c-cut sapphire at temperatures below 40 K. MgB 2 films with surface resistance (Rs) as low as 0.09 mOhm} at 8 K and 19

The NIST Microforce Realization and Measurement Project

April 1, 2003
Author(s)
David B. Newell, Edwin R. Williams, John A. Kramar, Jon R. Pratt, Douglas T. Smith
The National Institute of Standards and Technology (NIST) has launched a five-year Micro-force Realization and Measurement project focusing on the development of an instrument and laboratory capable of realizing and measuring the SI unit of force below

Research on Site Qualifications above 1 GHz

February 18, 2003
Author(s)
Michael Windler, Dennis G. Camell
This is a summary of recent efforts conducted under the auspices of the American National Standards Institute (ANSI) Accredited Standards Committee C63, Sub-committee 1, working group 1-13.2. The main purpose of this group is to assess the applicability of

A Monolithic CMOS Microhotplate-based Gas Sensor System

December 1, 2002
Author(s)
Muhammad Afridi, John S. Suehle, Mona E. Zaghloul, David W. Berning, Allen R. Hefner Jr., Richard E. Cavicchi, Stephen Semancik, C B. Montgomery, C J. Taylor
A monolithic CMOS microhotplate-based conductance type gas sensor system is described. A bulk micromachining technique is used to create suspended microhotplate structures. The thermal properties of the microhotplates include a one-millisecond thermal time

Large Area, Ultra-high Voltage 4H-SiC PiN Rectifiers

December 1, 2002
Author(s)
Ranbir Singh, Kenneth G. Irvine, D C. Capell, James Richmond, David W. Berning, Allen R. Hefner Jr., John W. Palmour
This paper reports the design, fabrication, and high temperature characteristics of 1 mm 2, 4 mm 2, and 9 mm 2 4H-SiC rectifiers with 6 kV, 5 kV, and 10 kV blocking voltage respectively. These results were obtained from two lots in an effort to increase

Monte Carlo Simulation of Noise Parameter Uncertainties

November 1, 2002
Author(s)
James P. Randa, Wojciech Wiatr
We present results for uncertainties in noise-parameter measurements, obtained using a Monte Carlo simulation of the measurements. Sets of data were generated to simulate measurements on a low-noise amplifier, with given uncertainties in the underlying

Thermal Component Models for Electro-Thermal Analysis of Multichip Power Modules

October 24, 2002
Author(s)
J J. Rodriguez, John V. Reichl, Zharadeen R. Parrilla, Allen R. Hefner Jr., David W. Berning, M Velez-Reyes, Jih-Sheng Lai
Thermal component models are developed for multi-chip IGBT power electronic modules (PEM) and associated high-power converter heatsinks. The models are implemented in SABER and are combined with the electro-thermal IGBT and diode models to simulate the

Noise-Parameter Uncertainties: A Monte Carlo Simulation

October 1, 2002
Author(s)
James P. Randa
This paper reports the formulation and results of a Monte Carlo study of uncertainties in noise-parameter measurements. The simulator permits the computation of the dependence of the uncertainty in the noise parameters on uncertainties in the underlying

A Monolithic Implementation of Interface Circuitry for CMOS Compatible Gas-Sensor System

July 1, 2002
Author(s)
Muhammad Afridi, John S. Suehle, Mona E. Zaghloul, David W. Berning, Allen R. Hefner Jr., Stephen Semancik, Richard E. Cavicchi
A monolithic CMOS micro-gas-sensor system, designed and fabricated in a standard CMOS process, is described. The gas-sensor system incorporates an array of four microhotplate-based gas-sensing structures. The system utilizes a thin film of tin-oxide (SnO 2

Simulations of Noise-Parameter Uncertainties

June 7, 2002
Author(s)
James P. Randa
This paper reports results for uncertainties obtained using a Monte Carlo simulation of noise-parameter measurements. The simulator permits the computation of the dependence of the uncertainty in the noise parameters on uncertainties in the underlying

Vector Corrected Noise Temperature Measurements

June 7, 2002
Author(s)
Mark H. Weatherspoon, Lawrence P. Dunleavy, Ali Boudiaf, James P. Randa
A new one-port noise temperature measurement technique is presented that uses receiver noise parameters for error correction. Improved accuracy in one-port noise temperature measurements made with commercial systems is demonstrated without using isolators

Transient Heating Study of Microhotplates by Using a High-Speed Thermal Imaging System

March 1, 2002
Author(s)
Muhammad Afridi, David W. Berning, Allen R. Hefner Jr., John S. Suehle, Mona E. Zaghloul, Eric Kelley, Zharadeen R. Parrilla, Colleen E. Hood
A high-speed thermal imaging system is used to investigate the dynamic thermal behavior of MEMS-based (MicroElectroMechanical Systems) microhotplate devices. These devices are suspended microstructures fabricated in CMOS technology and are used in various

Foreword for Motohisa Kanda's Special Issue

February 1, 2002
Author(s)
Christopher L. Holloway, Perry F. Wilson
This special issue of the IEEE EMC Transactions is in honor of Dr. Motohisa Kanda who passed away on June 12, 2000. Dr. Kanda, known to most of us simply as "Moto," was an important figure within the EMC community and served as Editor of the IEEE EMC

Characterization and Modeling of Silicon-Carbide Power Devices

December 1, 2001
Author(s)
Allen R. Hefner Jr., David W. Berning, Ty R. McNutt, Alan Mantooth, Jih-Sheng Lai, Ranbir Singh
New Power semiconductor devices have begun to emerge that utilize the advantages of silicon carbide (SiC). As SiC power device types are introduced, circuit performance and reliability characterization are required for system designers to adopt the new

Noise Parameter Uncertainties from Monte Carlo Simulations

November 8, 2001
Author(s)
James P. Randa, Wojciech Wiatr
We present results for uncertainties in noise-parameter measurements, obtained using a Monte Carlo simulation of the measurements. Sets of data were generated to simulate measurements on a low-noise amplifier, with given uncertainties in the underlying
Displaying 376 - 400 of 655