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Displaying 401 - 425 of 718

Scatterfield Microscopy of 22 nm Node Patterned Defects using Visible and DUV Light

April 4, 2012
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Richard M. Silver, Abraham Arceo
Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This initial experimental study, augmented with simulation, evaluates scatterfield microscopy to

Dielectrophoretic Cell Capture on Polyester Membranes

April 2, 2012
Author(s)
Conni Hanke, Petra S. Dittrich, Darwin Reyes-Hernandez
A new system for dielectrophoretic cell capture on porous polyester (PET) membranes is presented. Conventional photolithographic techniques were used to fabricate gold microelectrodes on a PET membrane. We characterized these electrodes to proof that there

SEM imaging of ultra-high aspect ratio hole features

March 29, 2012
Author(s)
John S. Villarrubia, Aron Cepler, Benjamin D. Bunday, Bradley Thiel
In-line, non-destructive process control metrology of high aspect ratio (HAR) holes and trenches has long been a known gap in metrology. Imaging the bottoms of at-node size beyond 10:1 AR contact holes in oxide has not yet been demonstrated. Nevertheless

A Case Study on the Impact of Local Material Chemistry on the Mechanical Reliability of Packaged Integrated Circuits: Correlation of the Packaging Fallout to the Chemistry of Passivation Dielectrics in an Al-Cu System

March 19, 2012
Author(s)
Chukwudi A. Okoro, Yaw S. Obeng
In this paper, we use a variety of analytical techniques to examine the impact of local chemistry, and the mechanical properties, of the encapsulation dielectric films on the post-packaging device rejection rate of integrated circuit devices. A strong

Carbohydrate-Functionalized Surfactant Vesicles for Controlling Glycan Density

March 15, 2012
Author(s)
Monique A. Makos, Rebecca A. Zangmeister
We report on the development of a method for rapidly characterizing the glycan binding properties of lectins. Catanionic surfactant vesicles were prepared that spontaneously formed in water and remained stable at room temperature for months. By varying the

High Speed Endurance and Switching Measurements for Memristive Switches

March 6, 2012
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient

Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy

March 6, 2012
Author(s)
Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A. Kirillov, Curt A. Richter, Nhan Van Nguyen
The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height from

VCI Simulation with Semiconductor Device Models: Test Report

February 29, 2012
Author(s)
John S. Villarrubia
JMONSEL, an electron beam imaging simulator, has been modified to permit conducting regions of a sample to be designated as unconnected to an external source or sink of charge (floating) or, alternatively, to be connected with a user-specified relaxation

Radio Frequency and Analog/Mixed-Signal Technologies

January 20, 2012
Author(s)
Herbert S. Bennett, John J. Pekarik
This 2011 roadmap for radio frequency and analog/mixed-signal (RF and AMS) technologies presents the challenges, technology requirements, and potential solutions for the basic technology elements (transistors and passive devices). RF and AMS technologies

ITRS Chapter: RF and A/MS Technologies

January 12, 2012
Author(s)
Herbert S. Bennett, John J. Pekarik
Radio frequency and analog/mixed-signal (RF and A/MS) technologies are essential and critical technologies for the rapidly diversifying semiconductor market that comprises many more applications than the wireless and wire-line communications market that

MEMS

January 12, 2012
Author(s)
Michael Gaitan
Micro-Electro-Mechanical Systems (MEMS) are devices that are fabricated using techniques similar to those used for integrated circuits (ICs) to create micrometer-sized mechanical structures (suspended bridges, cantilevers, membranes, fluid channels, etc.)

More than Moore or More Moore: a SWOT analysis

December 28, 2011
Author(s)
Herbert S. Bennett, G. D. Hutcheson
Over the last decade, the world of semiconductors has broadened its horizon from More Moore and beyond conventional scaling to More than Moore. Some first hypothesized the end of Moore’s law and the beginning of a new era. They saw it as an OR gate while

When Does a Circuit Really Fail?

December 15, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Tony Oates, Phillip Wong, John S. Suehle

Origin of Electrical Signals for Plasma Etching Endpoint Detection

November 18, 2011
Author(s)
Mark A. Sobolewski
Electrical signals are used for endpoint detection in plasma etching, but the origin of the electrical changes observed at endpoint is not known. They may be caused by changes in the gas-phase densities of etch products and reactants or by changes in

Self-Repairing Complex Helical Columns Generated via Kinetically Controlled Self-Assembly of Dendronized Perylene Bisimides

November 16, 2011
Author(s)
Virgil Percec, Steven Hudson, Mihai Peterca, Pawaret Leowanawat, Emad Aqad, Robert Graf, Hans -. Spiess, Xiangbing Zeng, Goran Ungar, Paul A. Heiney
The dendronized perylene 3,4:9,10-tetracarboxylic acid bisimide (PBI) (3,4,5)12G1-3-PBI was recently shown to self-assemble in a complex helical column containing tetramers of PBI as the basic repeat unit. The tetramers contain a pair of two molecules

Fundamental Limits of Optical Patterned Defect Metrology

November 14, 2011
Author(s)
Richard M. Silver, Bryan Barnes, Martin Sohn, Hui Zhou, Jing Qin
The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has become

Reliability Testing of Advanced Interconnect Materials

November 10, 2011
Author(s)
Robert R. Keller, Mark C. Strus, Ann C. Chiaramonti Debay, David T. Read, Younglae Kim, Yung J. Jung
We describe the development of electrical test methods to evaluate damage that determines reliability in advanced, small-scale conductors, including damascene copper and aligned carbon nanotube networks. Rapid thermal cycling induced during high-current AC
Displaying 401 - 425 of 718