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Displaying 426 - 450 of 718

In Situ Gas Phase Diagnostics for Titanium Nitride Atomic Layer Deposition

October 14, 2011
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling
This report describes the performance of a technique for the simultaneous, rapid measurement of major gas phase species present during titanium nitride thermal atomic layer deposition involving tetrakis(dimethylamido) titanium (TDMAT) and ammonia. In this

Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via

October 11, 2011
Author(s)
Ryan P. Koseski, William Alexander Osborn, Stephan J. Stranick, Frank W. DelRio, Mark D. Vaudin, Thuy Dao, Vance H. Adams, Robert F. Cook
The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabrication

High Speed Switching Characteristics of Pt/Ta2O5/Cu Memristive Switch

October 8, 2011
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable of

Formation and transfer of GaAsN nanostructure layers

September 27, 2011
Author(s)
Christopher L. Soles, Hyun W. Ro, A. Wood, N. Estrada, B. Dick, Y. Wang, Micheal Thouless, Rachel Goldman
Nanostructured materials with ultra-small crystallites (approaching the exciton Bohr radius) embedded in a solid-state matrix have great potential for optoelectronic and energy-conversion applications owing to the possibility of invoking quantum effects

Circuit-Aware Device Reliability Criteria Methodology

September 12, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Anthony Oates, John S. Suehle, Phillip Wong
Meeting reliability requirements is an increasingly more difficult challenge with each generation of CMOS technology. The disconnection between conventional one-size-fits-all reliability specifications and the wide range of circuit applications might be a

High Mobility Channel from the Prospective of Random Telegraph Noise

September 12, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
We experimentally verify for the first time that random telegraph noise (RTN) in ultra-scaled MOSFETs is related to the inversion charge density in the channel. We then examine the merit of high mobility channel devices from the RTN prospective. This

Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy

September 8, 2011
Author(s)
Matthew D. Brubaker, Kristine A. Bertness, Norman A. Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions

Effect of Regioregularity on the Semicrystalline Structure of Poly(3-hexylthiophene

August 25, 2011
Author(s)
Chad R. Snyder, Dean M. DeLongchamp, Jessica S. Henry
The impact of regioregularity in poly(3-hexylthiophene-2,5-diyl) (P3HT) on crystallization behavior and quantitative limits to possible crystal sizes is discussed, and it is explained why regioregularities must be reported for any study to be properly

Spin Dependent Charge Pumping in SiC Metal-Oxide-Semiconductor Field-Effect-Transistors

August 25, 2011
Author(s)
Brad Bittel, Patrick Lenahan, Jason Ryan, Jody Fronheiser, Aivars Lelis
We demonstrate a very powerful electrically detected magnetic resonance (EDMR) technique, spin dependent charge pumping (SDCP) and apply it to 4H SiC metal-oxide-semiconductor field-effect-transistors (MOSFETs). SDCP combines a widely used electrical

A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices

August 1, 2011
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
Series resistance has become a serious obstacle inhibiting the performance of advanced CMOS devices. However, series resistance quantification in these same advanced CMOS devices is becoming exceedingly difficult. In this study, we demonstrate a very

In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition

July 12, 2011
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling
Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical vapor

Self-Assembly of Dendronized Perylene Bisimides into Complex Helical Columns

June 24, 2011
Author(s)
Virgil Percec, Mihai Peterca, Timur Tadjiev, Xiangbing Zeng, Goran Ungar, Pawaret Leowanawat, Emad Aqad, Mohammad Imam, Brad Rosen, Umit Akbey, Robert Graf, Sivakumar Sekharan, Daniel Sebastiani, Hans -. Spiess, Paul A. Heiney, Steven Hudson
The synthesis of perylene 3,4:9,10-tetracarboxylic acid bisimides (PBIs) dendronized with first generation dendrons containing 0 to 4 methylenic units (m) between the imide group and the dendron, (3,4,5)12G1-m-PBI, is reported. Structural analysis of their

Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states

June 6, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle
The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method’s simplicity and high sensitivity makes it a powerful tool for

A Physics-Based Simple Series Resistance Extraction Methodology

June 1, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
Series resistance has become a serious obstacle encountered in the development of advanced CMOS devices. At the same time, series resistance quantification in these same advanced CMOS devices is a difficult challenge. In this study, we demonstrate a very

Electromigration of Cu Interconnects Under AC and DC Test Conditions

May 15, 2011
Author(s)
Robert R. Keller, David T. Read, Roey Shaviv, Greg Harm, Sangita Kumari
Electromigration of a 65 nm technology generation test vehicle was measured using DC, AC followed by DC, and three rectangular wave DC stressing conditions at 598 K. In some of the experiments samples were allowed to cool to room temperature between stress

Imaging Cells in Polymer Scaffolds by X-Ray Microcomputed Tomography

May 11, 2011
Author(s)
Shauna M. Dorsey, Sheng Lin-Gibson, Carl Simon Jr.
We have investigated the ability of X-ray microcomputed tomography (CT) to make quantitative, three-dimensional (3D) measurements of cell adhesion and proliferation in polymeric tissue engineering scaffolds. The most common method for examining cells in

On The Magnitude of Random Telegraph Noise in Ultra-Scaled MOSFETs

May 2, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
Random telegraph noise (RTN) has been shown to be a more severe scaling issue than the Random Dopant Effect (RDE). However this observation relies heavily on studies which focus only on threshold voltage (VTH) fluctuations. VTH measurements make separation

Characterization of the First Order Nonlinear Stiffened Elasticity of the Piezoelectric Layer in Bulk Acoustic Wave Resonators

May 1, 2011
Author(s)
Juan C. Collado Gomez, Eduard Rocas, Jordi Mateu, Nathan D. Orloff, James C. Booth, Alberto Padillo, Juan Callaghan
This work proposes a procedure to characterize the intrinsic nonlinearities of bulk acoustic wave resonators by performing one port measurements of the second harmonic and second order intermodulation spurious signals. Closed-form expressions have been
Displaying 426 - 450 of 718