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Displaying 476 - 500 of 655

Total Electron Scattering Cross Section for Cl 2

January 1, 1999
Author(s)
Gary D. Cooper, Jason E. Sanabia, J. H. Moore, James K. Olthoff, Loucas G. Christophorou
Absolute measurements of the total electron scattering cross section for chlorine, Cl2, are reported for electron energies ranging from .3 eV to 23 eV. The present data are in reasonable agreement with previous measurements of the cross sections for total

Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions

December 31, 1998
Author(s)
Chien-Chung Shen, Allen R. Hefner Jr., David W. Berning, J B. Bernstein
The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Revers

Characterization and Applications of On-Wafer Diode Noise Sources

December 1, 1998
Author(s)
Lawrence P. Dunleavy, James P. Randa, Dave K. Walker, Robert L. Billinger, John Rice
A set of wafer-probeable diode noise source transfer standards are characterized using on-wafer noise-temperature methods developed at the National Institute of Standards and Technology (NIST), Boulder, CO.

Effect of Temperature on Electron Attachment to and Negative Ion States of CCl 2 F 2

November 1, 1998
Author(s)
Yicheng Wang, Loucas G. Christophorou, J. K. Verbrugge
The effect of temperature on electron attachment to dichlorodifluoromethane (CCl 2F 2) has been investigated for temperatures up to 500 K and for mean electron energies from thermal to 1.0 eV using an electron swarm method. The measurements were made in

Scanning Height for ANSI C63.5 Calibrations

August 1, 1998
Author(s)
Kenneth H. Cavcey, Dennis G. Camell
The configuration of antennas at an Open Area Test site (OATS) for calibrations results in constructive and destructive electric fields. Regardless of the calibration method used, the antenna to be calibrated should be loacted where the field varies slowly

International Comparison of Noise-Temperature Measurements at 2, 4, and 12 GHz

July 1, 1998
Author(s)
James P. Randa, J. Achkar, F. I. Buchholz, T. Colard, D. Schubert, M. Sinclair, John Rice, G. S. Williams
We report results of a recent international comparison of thermal noise-power measurements, performed under the auspices of CIPM/CCE. The noise temperatures of two solid-state sources with GPC-7 connectors were measured at 2, 4, and 12 GHz. All results

Characterization of On-Wafer Diode Noise Sources

June 1, 1998
Author(s)
James P. Randa, Dave K. Walker, Lawrence P. Dunleavy, Robert L. Billinger, John Rice
A set of wafer probeable diode noise source transfer standards are characterized using on-wafer noise temperature methods developed recently at the National Institute of Standards and Technology (NIST). This paper reviews the methods for accurate on-wafer

Uncertainties in NIST Noise-Temperature Measurements

March 1, 1998
Author(s)
James P. Randa
Uncertainty analyses are presented for NIST measurements of noise temperature. All systems currently used in NIST calibrations of thermal-noise sources are treated. These include tuned systems for 30 and 60 MHz, coaxial total-power radiometers for 1 to 12

Characterization of Coplanar Waveguide on Epitaxial Layers

August 14, 1997
Author(s)
Dylan F. Williams, J. M. Belquin, Alain Spisser, Alain Cappy, G. Dambrine
We examine the effect of thin AlInAs/GaInAs epitaxial layers on the propagation of electrical signals in coplanar waveguide transmission lines fabricated on semi-insulating indium phosphide substrates. We show that argon isolation implants effectively
Displaying 476 - 500 of 655