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Displaying 601 - 625 of 718

Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM

March 24, 2008
Author(s)
Chengqing C. Wang, Ronald L. Jones, Kwang-Woo Choi, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, James S. Clarke, John S. Villarrubia, Benjamin Bunday
Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabilities

Internal Photoemission Spectroscopy of [TaN/TaSiN] and [TaN/TaCN] Metal Stacks On SiO2 and [HfO2 / SiO2] Dielectric Stack.

March 6, 2008
Author(s)
Nhan V. Nguyen, Hao Xiong, John S. Suehle, Oleg A. Kirillov, Eric Vogel, Prashant Majhi, Huang-Chun Wen
Metal gates have been intensively searched to replace the poly-silicon for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (??0) at their interfaces with a gate dielectric must be known to select a suitable metal

Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules

March 3, 2008
Author(s)
Allen R. Hefner Jr.
Abstract: The DARPA Wide Bandgap Semiconductor Technology (WBGS) High Power Electronics (HPE) Phase II program is developing high-voltage, high-frequency SiC device and package technology needed to meet the specific program objectives for a 13.8 kV, 2.75

Modeling the Effect of Finite Size Gratings on Scatterometry Measurements

February 25, 2008
Author(s)
Elizabeth Kenyon, Michael W. Cresswell, Heather Patrick, Thomas Germer
The interpretation of scatterometry measurements generally assumes that the grating extends over an area large enough to intercept all the illumination provided by an incident beam. However, in practice, the grat-ings used in scatterometry are relatively

Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module

February 24, 2008
Author(s)
Tam H. Duong, Angel Rivera-Lopez, Allen R. Hefner Jr., Jose M. Ortiz
This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switches

High Sensitivity FTIR-ATR Study of Ultra-Thin Zr02 Films: A Study of Phase Change

February 12, 2008
Author(s)
Safak Sayan, Deane Chandler-Horowitz, Nhan Van Nguyen, James R. Ehrstein, Mark Croft
Fourier Transform Infrared spectroscopy (FTIR) using the Attenuated Total Reflection (ATR) method was performed in the mid-IR spectral region on ultrathin ZrO2 films deposited on silicon wafers. A vibrational mode near 710 cm-1 was observed that undergoes

Green Fluorescent Protein in Inertially Injected Aqueous Nanodroplets

January 30, 2008
Author(s)
Jianyong Tang, Ana Jofre, Geoffrey Lowman, Rani Kishore, Joseph E. Reiner, Kristian Helmerson, Lori S. Goldner, M E. Greene
We inertially inject and study the contents of optically trappable aqueous nanodroplets (hydrosomes) emulsified in a perfluorinated matrix. A new piezoelectric actuated device for production of single hydrosomes on demand is introduced. Hydrosomes

Current Status of the Quantum Metrology Triangle

January 18, 2008
Author(s)
Mark W. Keller
The quantum metrology triangle is a test of the consistency of three quantum electrical standards: the single-electron tunneling current standard, the Josephson voltage standard, and the quantum Hall resistance standard. This paper considers what is known

Raman Spectroscopic Determination of Hole Concentration in p-Type GaSb

January 2, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
Room temperature p-type GaSb bulk coupled mode spectra were measured as a function hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode

Comparison of SEM and HRTEM CD Measurements Extracted from Test-Structures Having Feature Linewidths from 40 nm to 240 nm

January 1, 2008
Author(s)
Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Christine E. Murabito, Ronald G. Dixson, Amy Hunt
CD (Critical Diminsion) measurements have been extracted from SEM (Scanning Electron Microscopy) and HRTEM (High Resolution Transmission Electron Microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 nm and 240

The Direct Patterning of Nanoporous Interlayer Dielectric Insulator Films by Nanoimprint Lithography

October 2, 2007
Author(s)
Hyun Wook Ro, Ronald L. Jones, H Peng, Daniel R. Hines, Hae-Jeong Lee, Eric K. Lin, Alamgir Karim, Do Y. Yoon, D Gidley, Christopher L. Soles
Directly patterning dielectric insulator materials via nanoimprint lithography has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. However, the prospect of mechanically forming

Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths

October 1, 2007
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is important to

Tracing Electronic Pathways in Molecules Using Inelastic Tunneling Spectroscopy

September 4, 2007
Author(s)
Alessandro Troisi, J M. Beebe, Laura B. Picraux, Roger D. van Zee, D R. Stewart, M Ratner, James G. Kushmerick
Using inelastic electron tunneling spectroscopy (IETS) to measure the vibronic structure of non-equilibrium molecular transport, aided by a quantitative interpretation scheme based on non-equilibrium Greens function/density functional theory methods, we

Building Electronic Function Into Nanoscale Molecular Architectures

August 30, 2007
Author(s)
H D. Abruna, M Ratner, Roger D. van Zee
The use of molecules in electronic circuit has been the subject of recent study. Experimentally, two-terminal, molecular rectifiers have been demonstrated, three-terminal, single-molecule transistors demonstrated, and electromechanical molecular switches

Energy-Level Alignment and Work Function Shifts for Thiol-Bound Monolayers of Conjugated Molecules Self-Assembled on Ag, Cu, Au, and Pt

July 1, 2007
Author(s)
Christopher D. Zangmeister, Laura B. Picraux, Roger D. van Zee, Yuxing Yao, J M. Tour
Photoemission spectra have been used to determine the energy-level alignment and work function of monolayers of 4,4'-bis-(phenylethynyl)benzenethiol, 2 naphthalene thiol, and 3-(naphthalen-2-yl)propane-1-thiol self-assembled on Ag, Cu, Au, and Pt. For each

Extracting Electron Densities in N-Type GaAs from Raman Spectra: Theory

July 1, 2007
Author(s)
Herbert S. Bennett
Raman measurements are proposed as a non-destructive method for wafer acceptance tests of carrier density. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort
Displaying 601 - 625 of 718