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NIST Authors in Bold

Displaying 626 - 650 of 718

I-NEMI 2007 Organic and Printed Electronics Roadmap

April 2, 2007
Author(s)
Jan Obrzut, Regis J. Kline, Eric K. Lin, David J. Gundlach, Daniel Gamota
This roadmap provides an overview of the most critical technologies necessary for commercial launch and market diffusion of organic & printed electronics based products. To the best of our knowledge, this roadmap is the first of its kind and as such should

On-Wafer Measurement of Transistor Noise Parameters at NIST

April 1, 2007
Author(s)
James P. Randa, Dave K. Walker
NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. We describe the measurement method and the uncertainty analysis and present results of measurements on a very poorly matched transistor.

Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms

March 22, 2007
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, A. J. Smith, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Michael W. Cresswell, Richard A. Allen
Test Structures for the extraction of Electrical Critical Dimensions (ECD) and having all-copper features with no barrier metal films have been fabricated. The advantage of this approach is that electrical measurements provide a non-destructive method for

Reliability and Characterization Challenges for Nano-Scale Electronic Devices

March 14, 2007
Author(s)
John S. Suehle, Hao Xiong, Moshe Gurfinkel
Scaling electronic devices to nano-scale dimensions may introduce unforeseen physical mechanisms that may seriously compromise device reliability. It has been discussed that as individual atoms comprise a larger fraction of the actual device area, defects

Mechanically Robust Spin-On Organosilicates Glasses for Nanoporous Applications

February 7, 2007
Author(s)
Hyun Wook Ro, K Char, Eun-Chae Jeon, H C. Kim, Dongil Kwon, Hae-Jeong Lee, J. H. Lee, Hee-Woo Rhee, Christopher L. Soles, Do Y. Yoon
An increasing number of technologies demand nanoporous materials with vastly improved physical, mechanical and thermal properties. This manuscript develops the microstructural basis for synthesizing organosilicate glasses (OSGs) with unprecedented thermal

Length Dependent Uptake of DNA-Wrapped Single Walled Carbon Nanotubes

January 1, 2007
Author(s)
Matthew Becker, Jeffrey Fagan, Nathan D. Gallant, Barry J. Bauer, Vardhan Bajpai, Erik K. Hobbie, Silvia H. De Paoli Lacerda, Kalman D. Migler, J P. Jakupciak
DNA-wrapped single wall carbon nanotubes (SWNTs) with broad length distributions are shown to reduce the viability of IMR90 primary human lung fibroblast cells above the (23 to 25) ug/mL concentration regime. Furthermore using well-defined length fractions

Will Future Measurement Needs for the Semiconductor Industry Be Met?

January 1, 2007
Author(s)
Herbert S. Bennett, Alain C. Diebold, C. M. Garner
We present an assessment of the state of the nation''s measurement system in its ability to meet the metrology needs of the semiconductor industry. Lacking an acceptable metric for the assessing the health of metrology for the semiconductor industry, we

Future Perspective of RF and Analog/Mixed-Signal Integrated Circuit Technologies for Mobile Communications

October 23, 2006
Author(s)
Bin Zhao, Herbert S. Bennett, Julio Costa, Peter Cottrell, Anthony A. Immorlica, Margaret Huang, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel
Radio frequency (RF) and analog/mixed-signal (AMS) integrated circuits (ICs) are key enabling components for mobile and wireless communications and their advancements continue to drive the growth of the related semiconductor market. The circuit and

RF, Analog, and Mixed Signal Technologies for Communication ICs - An ITRS Perspective

October 10, 2006
Author(s)
Margaret Huang, Herbert S. Bennett, Julio Costa, Peter Cotrell, Anthony A. Immorlica, Jan-Erik Meuller, Charles E. Weitzel, Marco Racaneli, Hisashi Schichijo, Bin Zhao
The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon-based and III-V

Electrostatically gated Si devices: Coulomb blockade and barrier capacitance

August 10, 2006
Author(s)
Neil M. Zimmerman, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi
Using a new device resembling a nano-CCD, and measuring the Coulomb blockade, we identify a new parameter, the "barrier capacitance". We then show how this parameter can be used to learn about the underlying shape of the energy barrier under a gate with a

On-Chip Electrostatic Discharge Protection for CMOS Gas Sensor Systems-on-a-Chip (SoC)

August 1, 2006
Author(s)
Javier Salcedo, Juin J. Liou, Muhammad Y. Afridi, Allen R. Hefner Jr.
An on-chip Electrostatic Discharge (ESD) protection scheme is demonstrated for MicroElectroMechanical Systems (MEMS)-based Embedded Sensor (ES) System-on-a-Chip (SoC). The ESD protection scheme is implemented with ground-referenced multifinger thyristor

Electrochemical Study of Chitosan Films Deposited on Gold Electrodes

July 28, 2006
Author(s)
Rebecca A. Zangmeister, J J. Park, G W. Rubloff, Michael J. Tarlov
We report the electrochemical characterization of chitosan films deposited on gold electrodes. Cyclic voltammetry was used to characterize the deposition and electroactivity of chitosan coated gold electrodes. Chitosan films were found to deposit at a gold

On-Wafer Noise-Parameter Measurements at NIST

July 14, 2006
Author(s)
James P. Randa, Dave K. Walker
NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. In this paper we briefly describe the measurement methods and the uncertainty analysis and present results of measurements on a very poorly matched transistor

Terahertz radiometer design for traceable noise-temperature measurements

July 14, 2006
Author(s)
Eyal Gerecht, Dazhen Gu, James P. Randa, Dave K. Walker, Robert L. Billinger
We report on design of a radiometer for traceable noise-temperature measurements at terahertz frequencies, including noise measurements on cryogenic IF components, development and test of quasi-optical adapter technology, development of black body

Reverse Noise Measurement and Use in Device Characterization

June 10, 2006
Author(s)
James P. Randa, Tom McKay, Susan L. Sweeney, Dave K. Walker, Lawrence Wagner, David R. Greenberg, Jon Tao, G. Ali Rezvani
We review the concept of reverse noise measurements in the context of on-wafer transistor noise characterization. Several different applications of reverse noise measurements are suggested and demonstrated. Reverse measurements can be used to check
Displaying 626 - 650 of 718