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Displaying 676 - 700 of 718

High Inversion Current in Silicon Nanowire Field Effect Transistors

November 30, 2004
Author(s)
Sang-Mo Koo, Jin-Ping Han, Eric M. Vogel, Curt A. Richter, J. Vahakangas, Akira Fujiwara
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional 'top-down?approach using electron-beam lithography. The SiNW device shows higher inversion channel current density than the

Gene Expression Profiles of Cells in Response to Tyrosine Polycarbonate Blends

October 1, 2004
Author(s)
Matthew Becker, L A. Bailey, N Washburn, J Kohn, Eric J. Amis
The evaluation and identification of detrimental interactions between biological species and synthetic surfaces is a daunting challenge as the number of materials and control of physical variables increases. In this talk, the physical properties of

Micropatterning Neuronal Cells on Polyelectrolyte Multilayers

July 7, 2004
Author(s)
Darwin Reyes-Hernandez, Elizabeth M. Perruccio, Patricia Becerra, Laurie E. Locascio, Michael Gaitan
This paper describes an approach to adhere retinal cells on micropatterned polyelectrolyte multilayer (PEM) lines adsorbed on polydimethylsiloxane (PDMS) surfaces, using microfluidic networks. PEMs were patterned on flat oxidized PDMS surfaces by

Checks of Amplifier Noise-Parameter Measurements

June 11, 2004
Author(s)
James P. Randa, Dave K. Walker
We propose two verification methods for measurements of noise parameters of amplifiers, particularly low-noise amplifiers (LNAs). One method is a direct measurement of the parameter Trev, the noise temperature from the amplifier input, and the comparison

Valence Electron Orbitals of an Oligo(p-phenylene-ethynylene)thiol on Gold

March 1, 2004
Author(s)
Christopher D. Zangmeister, Steven W. Robey, Roger D. van Zee, Yuxing Yao, J M. Tour
One- and two-photon photoemission spectra have been measured for monolayers of oligo(para-phenylene-ethynylene) thiolate chemisorbed on gold surfaces. Within 5 eV of the Fermi level, four states are observed, two occupied (2.0 eV and 4.0 eV below the Fermi

Semiconductor Factory and Equipment Time Synchronization

February 25, 2004
Author(s)
Ya-Shian Li-Baboud, Brad Van Eck
With the advent of e-manufacturing including automated process control (APC), such as fault detection classification (FDC), more stringent accuracy requirements for time stamps are required to perform analysis intended for process and business critical

Quantitative Response Measurement of Cell Substrate Interactions via RT-PCR

February 1, 2004
Author(s)
Matthew Becker, L A. Bailey, Karen L. Wooley, J Kohn, Eric J. Amis, N Washburn
High-throughput metrologies for the rapid and systematic evaluation of synthetic materials, which would elucidate a candidate s potential biocompatibility, are needed. New synthetic methodologies have enabled a remarkable advance in the rational design of

Semiconductor Nanocrystal Probes for Human Metaphase Chromosomes

February 1, 2004
Author(s)
Yan Xiao, Peter E. Barker
Novel inorganic fluorophores called semiconductor nanocrystals have recently been incorporated into protein, antibody and microbead oligonucleotide detection methods where previously, organic dyes were universally employed. To improve quantitation of

Nonlinear Microwave Response of MgB 2 Thin Films

December 1, 2003
Author(s)
James C. Booth, Kenneth Leong, S. Y. Lee, J. H. Lee, B. Oh, H. N. Lee, S. H. Moon
Thin films of the newly discovered superconductor MgB 2 show promise for a number of different electronic applications. In order to evaluate the suitability of this new material for communication applications at microwave frequencies, we have measured both

Counting Errors in a Voltage-Biased Electron Pump

April 30, 2003
Author(s)
Xavier Jehl, Mark W. Keller, Richard L. Kautz, Joe Aumentado, John M. Martinis
We have measured the counting errors of a 7-junction electron pump when charge is pumped against a voltage difference. At voltages above about 50 υV, we find that the errors increase exponentially with both pump voltage and temperature, in agreement with

A Combinatorial Methodology to Discovering the Material Factors Controlling Resist Line Edge Roughness, Shape, and Critical Dimension

January 28, 2002
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Eric K. Lin, Christopher Soles, Wen-Li Wu, D M. Goldfarb, M Angelopoulos
A combinatorial research methodology is discussed to determine the material factors that control line edge roughness (LER), shape, and critical dimension (CD) of developed photo-resist features. The approach involves generating a gradient of processing

Noise Characterization of Multiport Amplifiers

October 1, 2001
Author(s)
James P. Randa
I address the issue of the definition and measurement of noise figure and parameters to characterize multiport devices, particularly differential amplifiers. A parameterization in terms of the noise matrix appears to be the most practical. the noise figure

Embedded Decoupling Capacitance Materials Characterization

December 1, 2000
Author(s)
Jan Obrzut
The dielectric constant of the embedded capacitance materials was measured in the frequency range from 100 Hz to 5 GHz. The testing included evaluation of the capacitance density, leakage current, and the effect of HAST on the capacitance. A test specimen

A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide

January 1, 2000
Author(s)
J H. Edgar, Larry Robins, S E. Coatney, L Liu, J Chaudhuri, K Ignatiev, Z J. Rek
The crystal structure and optical properties of AlN single crystals prepared by the sublimation-recondensation method were analyzed by cathodoluminescence (CL) spectroscopy, Raman spectroscopy, and synchrotron white-beam x-ray topography (SWBXT). Needles
Displaying 676 - 700 of 718