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Displaying 901 - 925 of 1721

High Throughput Measurement of Peel of a Pressure Sensitive Adhesive

January 1, 2006
Author(s)
P M. McGuiggan, James J. Filliben
The peel force of a pressure sensitive adhesive (PSA) tape is measured on a surface that varied linearly in temperature. As the tape is peeled from the surface, the adhesive is peeled from a surface at a different temperature. The temperature can be

Small Angle Neutron Scattering from Labeled Single Wall Carbon Nanotubes

January 1, 2006
Author(s)
Barry J. Bauer, Erik K. Hobbie, Matthew Becker
Small angle neutron scattering (SANS) is used with the high concentration method to extract single particle scattering from single wall carbon nanotubes (SWNTs). The SWNT material was labeled by covalently attaching -C4H9 or -C4D9 groups by use of free

Evaluation of the Anterior Cruciate Ligament, Medial Collateral Ligament, Achilles Tendon and Patellar Tendon as Cell Sources for Tissue-Engineered Ligament

December 1, 2005
Author(s)
James A. Cooper, L A. Bailey, Janell N. Carter, Cynthia Castiglioni, Michelle D. Kofron, Frank K. Ko, Cato T. Laurencin
This study investigated four different connective tissue cell types to determine which cell type is an optimal source for seeding a tissue-engineered Anterior Cruciate Ligament (ACL) replacement. Cells from the ACL, Medial Collateral Ligament (MCL)

Characterization of Atomic Layer Deposition Using X-Ray Reflectrometry

November 13, 2005
Author(s)
Donald A. Windover, N G. Armstrong, James P. Cline, P Y. Hung, A C. Diebold
This work addresses current limitations of X-ray reflectometry (XRR) for modeling thin films and provides a basis for their improvement. Better accuracy in the characterization of novel thin film structures requires better model selection techniques and

Composition and Carrier Concentration Dependence of the Electronic Structure of InyGa1-yAs1-xNx Films With Nitrogen Mole Fraction Less Than 0.012

November 1, 2005
Author(s)
Youn S. Kang, Lawrence H. Robins, Anthony Birdwell, Alexander J. Shapiro, W. R. Thurber, Mark D. Vaudin, M M. Fahmi, D Bryson, S N. Mohammad
The electronic structure of Si-doped InyGa1-yAs1-xNx films on GaAs substrates, grown bynitrogen-plasma-assisted molecular-beam epitaxy, was examined by photoreflectance PR spectroscopy at temperatures between 20 and 300 K. The films were approximately 0.5

Fracture Strength of Silicon Carbide Microspecimens

October 1, 2005
Author(s)
W N. Sharpe, O Jadaan, G M. Beheim, George D. Quinn, N N. Nemeth
Micro silicon carbide tension specimen were prepared with straight, curved, and notched gage lengths. These were tested to failure and the strengths analyzed by Weibull statistics. Fractographic analysis confirmed that strength limiting flaws were etch
Displaying 901 - 925 of 1721