January 1, 2004
Author(s)
Terrence J. Jach, Joseph A. Dura, Nhan V. Nguyen, J R. Swider, G Cappello, Curt A. Richter
We report on a comparative measurement of SiO 2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were