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Displaying 1376 - 1400 of 1845

Anisotropic Microstructure Development During the Reaction of Mg With GaAs

February 18, 1998
Author(s)
Steven W. Robey
Reaction of Mg with GaAs (001) surface occurs at substrate temperatures above 250 K and leads to 3D growth of an epitaxial, cubic reaction phase with a lattice constant of 0.62 + 0.02nm, 9% larger than GaAs. The resulting anistotropic, 3-demiensional (3D)
Displaying 1376 - 1400 of 1845