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NIST Authors in Bold

Displaying 1926 - 1950 of 2608

Dependency of Morphology on Miscut Angle for Si(111) Etched in NH 4 F

May 1, 2003
Author(s)
Joseph Fu, Hui Zhou, John A. Kramar, Richard M. Silver, S Gonda
Using scanning probe microscopy, we have examined the surfaces produced by etching several different vicinal Si(111) samples in NH 4F aqueous solution. In agreement with others, we found that deoxygenation of the etchant generally reduces the number of

Electron Beam Metrology of 193 nm Resists at Ultra Low Voltage

May 1, 2003
Author(s)
N. Sullivan, Ronald G. Dixson, B Bunday, M Mastovich, P Knutruda, P Fabre, R Brandoma
Resist slimming under electron beam exposure introduces significant measurement uncertainty in the metrology of 193 nm resists. Total critical dimension (CD) uncertainty of up to 10 nm can arise from line slimming through a combination of the line slimming

Implementation of a Reference Measurement System Using CD-AFM

May 1, 2003
Author(s)
Ronald G. Dixson, Theodore V. Vorburger, Angela Guerry, Marylyn H. Bennett, B Bunday
International SEMATECH (ISMT) and the National Institute of Standards and Technology (NIST) are working together to improve the traceability of atomic force microscope (AFM) dimensional metrology in semiconductor manufacturing. The rapid pace of

New Method to Enhance Overlay Tool Performance

May 1, 2003
Author(s)
Ravikiran Attota, Richard M. Silver, Michael T. Stocker, Egon Marx, Jay S. Jun, M P. Davidson, Robert D. Larrabee
New methods to enhance and improve algorithm performance and data analysis are being developed at NIST for overlay measurement applications. Both experimental data and improved theoretical optical scattering models have been used for the study. We have

Overlay Metrology Simulations: Analytical and Experimental Validations

May 1, 2003
Author(s)
Joel L. Seligson, B Golovanevsky, J M. Poplawski, M E. Adel, Richard M. Silver
We have previously reported on an overlay metrology simulation platform, used for modeling both the effects of overlay metrology tool behavior and the impact of target design on the ultimate metrology performance. Since our last report, the simulations by

Updated NIST Photomask Linewidth Standard

May 1, 2003
Author(s)
J Pedulla, James E. Potzick, Michael T. Stocker
NIST is preparing to issue the next generation in its line of binary photomask linewidth standards. Called SRM 2059, it was developed for calibrating microscopes used to measure linewidths on photomasks, and consists of antireflecting chrome line and space

CCEM-K2 Key Comparison of 10 Mohm and 1 Gohm Resistance Standards

April 1, 2003
Author(s)
Dean G. Jarrett, Ronald F. Dziuba
An international comparison of dc resistance at 10 Mohm and 1 Gohm was organized under the auspices of the Consultative Committee for Electricity and Magnetism (CCEM) and piloted by the National Institute of Standards and Technology (NIST) with 14 other

Relative Permittivity and Refractive Index

March 28, 2003
Author(s)
Michael R. Moldover, K N. Marsh, J M. Barthel, R Buchner
Measurements of the relative electric permittivity (dielectric constant or relative permittivity) e(p,T) and refractive index of fluids n(p,T) as a function of the pressure and the temperature can be used to determine a wide range of thermodynamic

Critical Dimension and Overlay Metrology

March 1, 2003
Author(s)
Michael T. Postek, Marylyn H. Bennett
Critical dimension and overlay metrology are two of the important measurements made in semiconductor device fabrication. Critical dimension metrology is important to ensure that the product meets the design target and overlay metrology ensures correct

Exploring and Extending the Limits of CD-SEMs' Resolution

March 1, 2003
Author(s)
Andras Vladar, Michael T. Postek, John S. Villarrubia
This study of SEM resolution is occasioned by concerns that it is no longer adequate for lithography process control in integrated circuit manufacturing. For example, according to the most recent International Technology Roadmap for Semiconductors, the in

A Model for Step Height, Edge Slope and Linewidth Measurements Using AFM

January 1, 2003
Author(s)
Xuezeng Zhao, Theodore V. Vorburger, Joseph Fu, Jun-Feng Song, C Nguyen
Nano-scale linewidth measurements are performed in semiconductor manufacturing and in the data storage industry and will become increasingly important in micro-mechanical engineering. With the development of manufacturing technology in recent years, the

Beauty Baryons and Neutrinos as Dark Matter

January 1, 2003
Author(s)
Egon Marx
Dark matter, according to a model of strong, weak, and electromagnetic interactions of elementary particles called the SWEEP model, is composed of beauty baryons and neutrions. In this model, all particles are composed of only three basic particle: the

Bullet Signature Measurements at NIST

January 1, 2003
Author(s)
Jun-Feng Song, Li Ma, Eric P. Whitenton, Theodore V. Vorburger
The RM (Reference Material) 8240 standard bullets are currently under development at the National Institute of Standards and Technology 9NIST) to support the coming National Integrated Ballistics Information Network (NIBIN). A bullet signature measurement

Computed Images of Dielectric Strips on a Substrate

January 1, 2003
Author(s)
Egon Marx
Accurate computed optical images of lines and trenches placed on semiconductors are of great interest to the manufacturers of computer components, especially in the overlay process for different layers. These images do not accurately reflect the form of

Displacement Uncertainty in Interferometric Radius Measurements

January 1, 2003
Author(s)
Tony L. Schmitz, Christopher J. Evans, Angela Davies, William T. Estler
Interferometric radius measurements may be completed using a radius bench, where radius is defined as the displacement between the confocal and cat?s eye nulls (identified using a figure measuring interferometer). Measurements of a Zerodur sphere have been
Displaying 1926 - 1950 of 2608