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Search Publications by: John A. Kramar (Fed)

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Displaying 26 - 50 of 88

Helium Ion Microscopy: A New Technique for Semiconductor Metrology and Nanotechnology

January 1, 2007
Author(s)
Michael T. Postek, Andras Vladar, John A. Kramar, L A. Stern, John Notte, Sean McVey
The Helium Ion Microscope (HIM) offers a new, potentially disruptive technique for nano-metrology. This methodology presents an approach to measurements for nanotechnology and nano-manufacturing which has several potential advantages over the traditional

New reference standards and artifacts for nanoscale physical property characterization

July 1, 2006
Author(s)
Jon R. Pratt, John A. Kramar, Gordon Shaw, Richard Gates, Paul Rice, John M. Moreland
This paper provides an overview of calibration artifacts being developed at the National Institute of Standards and Technology (NIST) that are intended to aid the accurate determination of nanoscale physical properties across a broad range of applications

Force Calibration Via Electrostatics

January 1, 2006
Author(s)
Jon R. Pratt, John A. Kramar, Gordon A. Shaw, Lee Kumanchik
We describe the electrical and length measurements necessary to realize micronewton forces in a fashion consistent with the International System of Units (SI). We first discuss instrumentation and procedures required to accurately characterize an

New Reference Standards and Artifacts for Nanoscale Physical Property Characterization

January 1, 2006
Author(s)
Jon R. Pratt, John A. Kramar, Gordon A. Shaw, Richard S. Gates, Paul Rice, John M. Moreland
This paper provides an overview of calibration artifacts being developed at the National Institute of Standards and Technology (NIST) that are intended to aid the accurate determination of nanoscale physical properties across a broad range of applications

SI Realization of Small Forces Using an Electrostatic Force Balance

January 1, 2006
Author(s)
Jon R. Pratt, John A. Kramar
We describe the realization of micronewton forces in a fashion consistent with the International System of Units (SI) using the National Institute of Standards and Technology (NIST) electrostatic force balance. A comparison between deadweight and

Nanometer Resolution Metrology with the NIST Molecular Measuring Machine

September 23, 2005
Author(s)
John A. Kramar
Nanometre accuracy and resolution metrology over technically relevant areas is becoming a necessity for the progress of nanomanufacturing. At the National Institute of Standards and Technology, we are developing the Molecular Measuring Machine, a scanned

Active Vibration Isolation for a Long-Range Scanning Tunneling Microscope

June 1, 2004
Author(s)
K J. Lan, J Y. Yen, John A. Kramar
Vibration Isolation or control is critical for the optimum operation of the Molecular Measuring Machine (M3), a high-resolution, length-metrology instrument at the National Institute of Standards and Technology. This paper describes the extension of the M3

Progress Towards SI Traceable Force Metrology for Nanomechanics

January 1, 2004
Author(s)
David B. Newell, Eric P. Whitenton, John A. Kramar, Jon R. Pratt, Douglas T. Smith
This paper is based, in its entirety, on NIST-approved publications: Calibration of Piezoresistive Cantilever Force Sensors Using the NIST Electrostatic Force Balance, The NIST Electrostatic Force Balance Experiment, The NIST Microforce Realization and

Progress Towards Systeme International d'Unites Traceable Force Metrology for Nanomechanics

January 1, 2004
Author(s)
Jon R. Pratt, Douglas T. Smith, David B. Newell, John A. Kramar, Eric P. Whitenton
Recent experiments with the National Institute of Standards and Technology (NIST) Electrostatic Force Balance (EFB) have achieved agreement between an electrostatic force and a gravitational force of 10^(-5) N to within a few hundred pN/¿N. This result

Dependence of Morphology on Miscut Angle for Si(111) Etched in NH(4)F

May 1, 2003
Author(s)
S Gonda, Joseph Fu, John A. Kramar, Richard M. Silver, Hui Zhou
Using scanning probe microscopy, we have examined the surfaces produced by etching several different vicinal Si(111) samples in NH(4)F aqueous solution. In agreement with others, we found that deoxygenation of the etchant generally reduces the number of