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Displaying 1 - 25 of 68

Optical and Structural Studies of Strain-Relaxed InxGa1-xN Films on GaN/sapphire with 0.04 0.47

February 19, 2017
Author(s)
Larry Robins, J T. Armstrong, Mark D. Vaudin, Charles E. Bouldin, Joseph Woicik, Albert J. Paul, W. R. Thurber, Ryna B. Marinenko
The structures of a set of InxGa1-xN films grown by atmospheric-pressure MOCVD onGaN buffer layers on c-plane sapphire, with compositions in the range 0.04 x 0.47, were characterized by x-ray diffraction (XRD). Several films were also examined by

Uncertainties in Electron Probe Microanalysis

March 12, 2010
Author(s)
Ryna B. Marinenko, Stefan D. Leigh
This tutorial discusses the importance of citing valid uncertainties when reporting analytical results and the need for a universally accepted approach for evaluating uncertainties. Today, the CIPM procedure has been accepted by numerous international

Characterization of SiGe Films for use as a National Institute of Standards and Technology (NIST) Microanalysis Reference material (RM 8905)

February 1, 2010
Author(s)
Ryna B. Marinenko, Shirley Turner, David S. Simons, Savelas A. Rabb, Rolf L. Zeisler, Lee L. Yu, Dale E. Newbury, Rick L. Paul, Nicholas W. Ritchie, Stefan D. Leigh, Michael R. Winchester, Lee J. Richter, Douglas C. Meier, Keana C. Scott, D Klinedinst, John A. Small
Bulk SiGe wafers cut from single-crystal boules and two SiGe thick films (4 m and 5 m thick) on Si wafers were evaluated with the electron probe microanalyzer for the extent of heterogeneity and composition for use as reference materials needed by the

Electron Microprobe Characterization of Si-Ge Alloys and Films for Use as Microanalysis Reference Materials

October 16, 2008
Author(s)
Ryna B. Marinenko, Shirley Turner, Dale E. Newbury, Robert L. Myklebust, Lee L. Yu, Rolf L. Zeisler, David S. Simons, John A. Small
Bulk SiGe wafers cut from single-crystal boules and SiGe thick films on Si wafers were evaluated with the electron probe microanalyzer for the extent of heterogeneity and composition for use as reference standards needed by the microelectronics industry in

Characterization of SiGe Bulk Compositional Standards with Electron Probe Microanalysis

September 1, 2003
Author(s)
Ryna B. Marinenko, J T. Armstrong, Shirley Turner, Eric B. Steel, F A. Stevie
Bulk SiGe wafers cut from single-crystal boules were evaluated with the electron probe microanalyzer (EPMA) for micro- and macroheterogeneity for use as primary standards for future characterization of SiGe thin films on Si that are needed by the

High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in Al x Ga 1-x As films

April 1, 2003
Author(s)
Larry Robins, J T. Armstrong, Ryna B. Marinenko, Albert J. Paul, John Pellegrino, Kristine A. Bertness
In an effort to improve the accuracy of photoluminescence (PL) measurements of the Al mole fraction (x) of Al xGa 1-xAs alloys, the PL peak emission energy, E PL,peak, was measured at room temperature for molecular-beam epitaxy-grown Al xGa 1-xAs films

High-Accuracy Determination of the Dependence of the PhotoluminescenceEmission Energy on Alloy Composition in Al x Ga 1-x As Films

April 1, 2003
Author(s)
Lawrence H. Robins, J T. Armstrong, Ryna B. Marinenko, Albert J. Paul, J G. Pellegrino, Kristine A. Bertness
In an effort to improve the accuracy of photoluminescence (PL)spectroscopy as a composition (Al mole fraction) measurement method forthe Al xGa 1-xAs alloy system, the PL peak emission energy,E PL,peak, was measured at room temperature for a set of MBE

Compositional Homogeneity of Ferroelectric (Pb,La)(Ti,Zr)O- 3 Thick Films

February 1, 2003
Author(s)
S Bernik, Ryna B. Marinenko, J Holc, Z Samardzija, M Ceh, M Kosec
Quantified WDS x-ray element maps were used to characterize active PLZT layers on Pt/PLZT/Al 2O 3 substrates, one fired at 1050 C and the other at 1150 C. In the layer fired at 1050 C randomly distributed micrometer size compositional irregularities were

X-ray diffraction, photoluminescence and composition standards of compound semiconductors

January 1, 2003
Author(s)
Alexana Roshko, Kristine A. Bertness, J T. Armstrong, Ryna B. Marinenko, Marc L. Salit, Lawrence H. Robins, Albert J. Paul, R J. Matyi
Work is underway to develop composition standards and standardized assessment procedures for compound semiconductors. An AlGaAs composition standard with less than 2% uncertainty is being developed. The improved accuracy of this standard is being achieved

NIST Standards for Microanalysis and the Certification Process

December 1, 2002
Author(s)
Ryna B. Marinenko
Procedures for testing research materials for the determination of the extent of within-specimen heterogeneity and between-specimen heterogeneity are described. These procedures, which have been developed and used at NIST in the certification of several