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Search Publications by: Nhan Van Nguyen (Assoc)

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Displaying 51 - 75 of 96

In Situ Gas Phase Diagnostics for Hafnium Oxide Atomic Layer Deposition

January 1, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, Donald R. Burgess Jr., William A. Kimes, Nhan V. Nguyen, Elizabeth F. Moore, Joseph T. Hodges
Atomic layer deposition (ALD) is an important method for depositing the nanometer-scale, conformal high  dielectric layers required for many nanoelectronics applications. In situ monitoring of ALD processes has the potential to yield insights that will

Internal Photoemission Spectroscopy of Metal Gate/High-k/ Semiconductor Interfaces

September 30, 2007
Author(s)
Nhan V. Nguyen, Oleg A. Kirillov, Hao Xiong, John S. Suehle
Internal photoemission (IPE) spectroscopy is a powerful technique for investigating electronic properties of inhomogeneous interfaces of hetero-structures. Two most important aspects of IPE measurements involve threshold spectroscopy and photoelectron

Work Function Characterization of TaSiN and TaCN Electrodes Using CV, IV, IPE and SKPM

November 1, 2006
Author(s)
Hao Xiong, Nhan V. Nguyen, Joseph J. Kopanski, John S. Suehle, Eric M. Vogel
Work function of TaSiN (TaCN) films on HfO2 or SiO2 gate dielectrics is investigated for the first time using a combination of Capacitance?Voltage, Fowler?Nordheim tunneling, internal Photoemission, and scanning Kelevin probe microscopy methods, which

Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures

February 1, 2006
Author(s)
Seong-Eun Park, Nhan V. Nguyen, Joseph J. Kopanski, John S. Suehle, Eric M. Vogel
Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in the

Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics

November 22, 2005
Author(s)
Safak Sayan, Nhan V. Nguyen, James R. Ehrstein, James J. Chambers, Mark R. Visokay, Manuel Quevedo-Lopez, Luigi Colombo, T Yoder, Igor Levin, Daniel Fischer, M Paunescu, Ozgur Celik, Eric Garfunkel
We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and conduction

Optical Bandgaps and Composition Dependence of Hafnium Aluminate Thin Films grown by Atomic Layer Chemical Vapor Deposition

November 17, 2005
Author(s)
Nhan V. Nguyen, Safak Sayan, Igor Levin, James R. Ehrstein, I.J.R. Baumvol, C. Driemeier, L Wielunski, Pui-Yee Hung, Alain C. Diebold
Hafnium-aluminate (HfAlO) films grown on Si by Atomic Layer Chemical Vapor Deposition (ALCVD) of different aluminum contents were investigated in this article. Vacuum Ultra-Violet Spectroscopic Ellipsometry (VUV-SE), high Resolution Transmission Electron

The Relation between Crystalline Phase, Electronic Structure and Dielectric Properties in High-K Gate Stacks

September 28, 2005
Author(s)
Safak Sayan, Mark Croft, Nhan Van Nguyen, Tom Emge, James R. Ehrstein, Igor Levin, John S. Suehle, Robert A. Bartynski, Eric Garfunkel
As high permittivity dielectrics approach use in metal-oxide-semiconductor field effect transistor (MOSFET) production, an atomic level understanding of their electronic, and dielectric properties are being rigorously examined. The valence and conduction

Amorphous to Tetragonal Transition in Ultrathin Zirconia Films: Effect on the Electronic and Dielectric Properties

September 1, 2005
Author(s)
Safak Sayan, Mark Croft, Nhan Van Nguyen, Tom Emge, Evgeni Gusev, Hyunjung G. Kim, James R. Ehrstein, Paul McIntyre, Eric Garfunkel
As medium-high permittivity dielectrics approach use in MOSFET production, an atomic level understanding of their permittivity and the capacitance of structures made from them are being rigorously examined. In this note, the issue of crystal structure in

Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy

May 9, 2005
Author(s)
Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
The crystalline quality of bonded Silicon-On-Insulator (SOI) wafers were examined by spectroscopic ellipsometry and Raman spectroscopy. Both techniques detect slight structural defects in the SOI layer. If a pure crystalline silicon dielectric function is

Crystalline Quality of Bonded Silicon-On-Insulator Characterized by Spectroscopic Ellipsometry and Raman Spectroscopy

October 4, 2004
Author(s)
Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
The crystalline quality of Silicon-On-Insulator fabricated by a wafer bonding technique was examined by spectroscopic ellipsometry and Raman spectroscopy. The detailed modeling of the experimental ellipsometric data yields information about structural

Critical Review of the Current Status of Thickness Measurements for Ultrathin SiO2 on Si, Part V: Results of a CCQM Pilot Study

October 1, 2004
Author(s)
M P. Seah, S J. Spencer, F Bensebaa, I Vickridge, H Danzebrink, Michael Krumrey, T Gross, W Oesterle, E Wendler, B Rheinlander, Yasushi Azuma, I Kojima, N Suzuki, M Suzuki, Shigeo Tanuma, D W. Moon, Hansuek Lee, H Cho, H Y. Chen, A T. Wee, T Osipowicz, J S. Pan, W A. Jordaan, R Hauert, U Klotz, C van der marel, M Verheijen, Y Tamminga, C Jeynes, P Bailey, S Biswas, U Falke, Nhan Van Nguyen, Deane Chandler-Horowitz, James R. Ehrstein, D Muller, Joseph Dura

Comparative Thickness Measurements of SiO 2 /Si Films for Thickness Less than 10 nm

January 1, 2004
Author(s)
Terrence J. Jach, Joseph A. Dura, Nhan V. Nguyen, J R. Swider, G Cappello, Curt A. Richter
We report on a comparative measurement of SiO 2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were

Ultra-thin SiO 2 on Si, Part V: Results of a CCQM Pilot Study of Thickness Measurements

December 1, 2003
Author(s)
M P. Seah, S J. Spencer, F Bensebaa, I Vickridge, H Danzebrink, Michael Krumrey, T Gross, W Oesterle, E Wendler, B Rheinlander, Yasushi Azuma, I Kojima, N Suzuki, M Suzuki, Shigeo Tanuma, D W. Moon, Hansuek Lee, H Cho, H Y. Chen, A T. Wee, T Osipowicz, J S. Pan, W A. Jordaan, R Hauert, U Klotz, C van der marel, M Verheijen, Y Tamminga, C Jeynes, P Bailey, S Biswas, U Falke, Nhan Van Nguyen, Deane Chandler-Horowitz, James R. Ehrstein, D Muller, Joseph Dura

Interfacial Properties of ZrO 2 on Silicon

May 15, 2003
Author(s)
Y S. Lin, R Puthenkovilakam, J Chang, Charles E. Bouldin, Igor Levin, Nhan Van Nguyen, James R. Ehrstein, Ying Sun, P Pianetta, T Conard, Wilfried Vandervorst, V Venturo, S Selbrede

Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices

May 13, 2001
Author(s)
John S. Suehle, Eric M. Vogel, Monica D. Edelstein, Curt A. Richter, Nhan Van Nguyen, Igor Levin, Debra Kaiser, Hanchang F. Wu, J B. Bernstein
As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain a value of capacitance to reduce short-channel effects and to keep device drive current at an