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Displaying 76 - 100 of 192

Photoemission Threshold Spectroscopy: MOS Band alignments

April 7, 2011
Author(s)
Nhan V. Nguyen
In this talk I will 1) briefly review SED’s history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, and 3)

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment.

August 27, 2008
Author(s)
Nhan V. Nguyen, Oleg A. Kirillov, Weirong Jiang, Wenyong Wang, John S. Suehle, P. D. Ye, Y. Xuan, N. Goel, Kwang-Woo Choi, Wilman Tsai
In this letter we report the band offsets of the Al/Al2O3/GaAs structure determined by internal photoemission and spectroscopic ellipsometry. The energy barrier height at the Al2O3 and sulfur-passivated GaAs interface is found to be 3.0 eV, which is

The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films

May 9, 2008
Author(s)
D. H. Hill, Robert A. Bartynski, Nhan Van Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M. Frank
We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS results are

Internal Photoemission Spectroscopy of [TaN/TaSiN] and [TaN/TaCN] Metal Stacks On SiO2 and [HfO2 / SiO2] Dielectric Stack.

March 6, 2008
Author(s)
Nhan V. Nguyen, Hao Xiong, John S. Suehle, Oleg A. Kirillov, Eric Vogel, Prashant Majhi, Huang-Chun Wen
Metal gates have been intensively searched to replace the poly-silicon for the next generation metal-oxide-semiconductor field-effect transistor. The barrier height (??0) at their interfaces with a gate dielectric must be known to select a suitable metal

High Sensitivity FTIR-ATR Study of Ultra-Thin Zr02 Films: A Study of Phase Change

February 12, 2008
Author(s)
Safak Sayan, Deane Chandler-Horowitz, Nhan Van Nguyen, James R. Ehrstein, Mark Croft
Fourier Transform Infrared spectroscopy (FTIR) using the Attenuated Total Reflection (ATR) method was performed in the mid-IR spectral region on ultrathin ZrO2 films deposited on silicon wafers. A vibrational mode near 710 cm-1 was observed that undergoes