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Search Publications by: Nhan Van Nguyen (Assoc)

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Displaying 76 - 96 of 96

In situ Metrology During the Growth of Compound Semiconductors by Molecular Beam Epitaxy

February 9, 2000
Author(s)
Donald A. Gajewski, Jonathan E. Guyer, Nhan Van Nguyen, Joseph G. Pellegrino
In this poster, we present the optical response of thin film compound semiconductors measured using in situ spectroscopic ellipsometry (SE), at growth temperatures ((180 to 600) 0C), during the growth by molecular beam epitaxy (MBE). We will focus on in

Spectroscopic Ellipsometry of Ta 2 0 5 On Si, in Ultrathin SiO 2 and High-K Materials for ULSI Gate Dielectrics, edited by H. R. Huff, C. A. Richter, M. L. Green, G. Lucovsky, and T. Hattori

September 1, 1999
Author(s)
Curt A. Richter, Nhan Van Nguyen, G A. Alers
In this paper, we present the results of spectroscopic ellipsometry (SE) studies of Ta 20 5 films on Si. Based on these results, we have experimentally determined an effective method for analyzing SE measurements of Ta 20 5. A set of CVD-grown Ta 20 5

Thin-Film Ellipsometry Metrology

March 1, 1998
Author(s)
P. Durgapal, James R. Ehrstein, Nhan Van Nguyen
A wide variety of commercial ellipsometers are available in the market today. They all measure the change in the state of polarization of light on reflection, but the techniques adopted vary from instrument to instrument. Further, the models used to