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Search Publications by: Marc L. Salit (Assoc)

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Displaying 51 - 64 of 64

High-accuracy determination of epitaxial AlGaAs composition with inductively coupled plasma optical emission spectroscopy

March 1, 2006
Author(s)
Kristine A. Bertness, C. M. Wang, Marc L. Salit, Gregory C. Turk, Therese A. Butler, Albert J. Paul, Larry Robins
Inductively coupled plasma optical emission spectroscopy is shown to confirm a recent correlation between photoluminescence (PL) peak energy for AlGaAs epitaxial films and the Al mole fraction x of those films. These two methods also agree within their

Intrinsic Standards for UV/Visible Spectrophotometry

April 1, 2004
Author(s)
John C. Travis, David L. Duewer, Marc L. Salit
The 21st century global marketplace and international performance standards provide a steady demand for fit-for-purpose reference materials. An efficient system for the delivery of reference materials to end-users begins with responsive and competitive

Composition Verification of AlGaAs Epitaxial Layers using Inductively Coupled Plasma Optical-Emission Spectroscopy

September 28, 2003
Author(s)
Kristine A. Bertness, Todd E. Harvey, Albert J. Paul, Larry Robins, Gregory C. Turk, Therese A. Butler, Marc L. Salit
We have applied an analytical chemistry method, inductively coupled plasma optical-emission spectroscopy (ICP-OES), to increase the accuracy of composition measurement of AlGaAs epitaxial thin films. ICP-OES results were compared with composition

Precision Wavelength Metrology with a Fourier Transform Spectrometer

June 1, 2003
Author(s)
D. Veza, Marc L. Salit, John C. Travis, Craig J. Sansonetti
We have investigated the intrinsic accuracy of the optical frequency scale in spectra acquired by a Fourier Transform Spectrometer (FTS). The uncalibrated accuracy of the FTS optical frequency axis is about 1 part in 10 5. This uncertainty can be reduced

X-ray diffraction, photoluminescence and composition standards of compound semiconductors

January 1, 2003
Author(s)
Alexana Roshko, Kristine A. Bertness, J T. Armstrong, Ryna B. Marinenko, Marc L. Salit, Lawrence H. Robins, Albert J. Paul, R J. Matyi
Work is underway to develop composition standards and standardized assessment procedures for compound semiconductors. An AlGaAs composition standard with less than 2% uncertainty is being developed. The improved accuracy of this standard is being achieved

Composition standards for III-V semiconductor epitaxial films

November 11, 2002
Author(s)
Kristine A. Bertness, Lawrence H. Robins, J T. Armstrong, Ryna B. Marinenko, Albert J. Paul, Marc L. Salit
A program is underway at NIST to establish standard reference materials (SRMs) for the calibration of instruments used to measure the chemical composition of epitaxially grown III-V semiconductor thin films. These SRMs are designed for the calibration of