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Search Publications by: Daniel Josell (Fed)

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Displaying 76 - 100 of 135

Cationic Surfactants for the Control of Overfill Bumps in Cu Superfilling

October 10, 2006
Author(s)
Soo K. Kim, Daniel Josell, Thomas P. Moffat
Electroanalytical measurements and feature filling experiments have been conducted to study the effect of dodecyltrimethylammonium chloride (DTAC), a quaternary ammonium cationic surfactant, on Cu deposition in the presence of various combinations of

Curvature Enhanced Adsorbate Coverage Model for Electrodeposition

January 11, 2006
Author(s)
Thomas P. Moffat, Daniel Wheeler, Soo K. Kim, Daniel Josell
The impact of leveling additives acting through the traditional leveling mechanism of accumulation and consumption has been coupled with the Curvature Enhanced Accelerator Coverage (CEAC) mechanism previously used to explain bottom-up superfill of features

Electrodeposition of Cu on Ru Barrier Layers for Damascene Processing

December 2, 2005
Author(s)
Thomas P. Moffat, Marlon L. Walker, P J. Chen, John E. Bonevich, William F. Egelhoff Jr., Lee J. Richter, Daniel Josell, C A. Witt, T Aaltonen, M Ritala, M Leskela
Superfilling of sub-micrometer trenches by direct copper electrodeposition onto PVD and ALD Ru barriers is demonstrated. The Cu nucleation and growth mode is found to be sensitive to the oxidation state of the Ru surface as well as the copper deposition

Gold Superfill in Sub-Micrometer Trenches: Experiment and Prediction

November 16, 2005
Author(s)
Daniel Josell, Daniel Wheeler, Thomas P. Moffat
Bottom-up deposition of gold in fine trenches, also called superfill, was recently demonstrated using a submonolayer coverage of preadsorbed, deposition-rate-accelerating lead followed by gold electrodeposition. The present study has used experiments on

Combinatorial Investigation of Structural Quality of Au/Ni Contacts on GaN

June 1, 2004
Author(s)
Albert Davydov, Leonid A. Bendersky, William J. Boettinger, Daniel Josell, Mark D. Vaudin, C S. Chang, Ichiro Takeuchi
A combinatorial library of Au/Ni metalizations on GaN were microstructurally characterized by x-ray diffraction (XRD), electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). The array of single- and bi-layered metal elements

Superconformal Deposition and the CEAC Mechanism

February 27, 2004
Author(s)
Thomas P. Moffat, Daniel Wheeler, Daniel Josell
The mechanism and modeling of superconformal film growth used in the electrochemical fabrication of 3-D Cu interconnects is briefly reviewed. The central role of electrolyte additives in controlling feature filling is fully described by the curvature

An Exact, Algebraic Solution for the Incubation Period of Superfill

January 1, 2004
Author(s)
Daniel Josell, Thomas P. Moffat, Daniel Wheeler
Recent publications have used the impact of area change coupled with conservation of adsorbed catalyst to quantify the superfill effect of bottom-up feature filling during electrodeposition and chemical vapor deposition. This work describes how that

Seedless Superfill: Copper Electrodeposition in Trenches with Ruthenium Barriers

August 4, 2003
Author(s)
Daniel Josell, Daniel Wheeler, C Witt, Thomas P. Moffat
Superconformal filling of fine trenches during electrodeposition of copper is described. Copper electrodeposition was accomplished durectly on a ruthenium layer. The ruthenium layer, as well as a titanium layer to promote adhesion, was evaporated on

Rapid Deformation of Thin Gold Layers in Polymer Matrices Studied by X-Ray Reflectivity

August 1, 2003
Author(s)
K Shin, H Wang, Sushil K. Satija, Charles C. Han, Daniel Josell, John E. Bonevich
We have used X-ray reflectivity to measure the morphological profiles of thin Au layers of three different average thicknesses sandwiched between two polystyrene layers with different molecular weights, Mw = 52.3k and Mw - 168.5k. The results showed that

Influence of a Catalytic Surfactant on Roughness Evolution During Film Growth

July 24, 2003
Author(s)
Daniel Wheeler, Thomas P. Moffat, Geoffrey B. McFadden, Sam R. Coriell, Daniel Josell
celerator Coverage (CEAC) based mechanism for the impact of additives on the evolution of surface roughness is explained; the CEAC mechanism accounts for the conservation of locl coverage of adsorbed catalyst on a deforming interface. It has recently been

Interfacial Reactions of Ti/n-GaN Contacts at Elevated Temperature

July 1, 2003
Author(s)
C J. Lu, Albert Davydov, Daniel Josell, Leonid A. Bendersky
Interfacial reactions in Ti/GaN contacts have been studied using conventional and high-resolution transmission electron microscopy (TEM), energy-filtered TEM (EFTEM) and X-ray diffraction. The thin film contacts were fabricated by evaporating Ti on n-GaN

Modeling Superconformal Electrodeposition Using the Level Set Method

May 1, 2003
Author(s)
Daniel Wheeler, Daniel Josell, Thomas P. Moffat
Superconformal filling (superfill) occurs when a high aspect ratio feature on a silicon wafer fills due to preferential metal deposition on the bottom surface that permits it to escape before deposition on the side walls causes them to close off. This

Superconformal Silver Deposition using KSeCn Derivatized Substrates

May 1, 2003
Author(s)
B C. Baker, C Witt, Daniel Wheeler, Daniel Josell, Thomas P. Moffat
Superconformal filling of sub-micrometer trenches was achieved using substrates that were catalyzed with KSeCn prior to metal deposition in a catalyst-free, silver-cyanide electrolyte. The degree of superfill was found to be dependent on the time the

Interconnect Fabrication by Superconformal Iodine-Catalyzed Chemical Vapor

April 3, 2003
Author(s)
Daniel Josell, S D. Kim, Daniel Wheeler, Thomas P. Moffat, S G. Pyo
The mechanism behind superconformal filling of fine features during surfactant catalyzed chemical vapor deposition is described and the metrology required to predict it is identified and quantified. The impact of adsorbed iodine coverage on copper

Accelerator Aging Effects During Copper Electrodeposition

April 1, 2003
Author(s)
Thomas P. Moffat, B C. Baker, Daniel Wheeler, Daniel Josell
Slow sweep rate voltammetric analysis of the Cu/Cu(II) deposition reaction is shown to be an effective tool for examining aging effects associated with thiol and disulfide additives that are widely employed as brighteners. Sulfonate-terminated short chain