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Search Publications by: Richard M. Silver (Fed)

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Displaying 26 - 50 of 307

STM patterned nanowire measurements using photolithographically defined implants in Si(100)

January 29, 2018
Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Ke Tang, Xiqiao Wang, Richard M. Silver, Michael D. Stewart, Joshua M. Pomeroy
Using photolithographically defined implant wires for electrical connections, we demonstrate measurement of a scanning tunneling microscope (STM) patterned nanoscale electronic device on Si(100), eliminating the onerous alignment procedures and electron

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

January 26, 2018
Author(s)
Xiqiao Wang, Joseph A. Hagmann, Pradeep N. Namboodiri, Jonathan E. Wyrick, Kai Li, Roy E. Murray, Frederick Meisenkothen, Alline F. Myers, Michael D. Stewart, Richard M. Silver
Doped semiconductor structures with ultra-sharp dopant confinement, minimal lattice defects, and high carrier concentrations are essential attributes in the development of both ultra- scaled conventional semiconductor devices and emerging all-silicon

Weak localization thickness measurements of embedded phosphorus delta layers in silicon produced by PH3 dosing

January 23, 2018
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Jonathan E. Wyrick, Roy E. Murray, Michael D. Stewart, Richard M. Silver
The key building blocks for devices based on the deterministic placement of dopants in silicon are the formation of phosphorus dopant monolayers and the overgrowth of high quality crystalline Si. Lithographically defined dopant delta-layers can be formed

Towards single atom devices for quantum information and metrology: weak localization in embedded phosphorus delta layers in silicon

June 29, 2017
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Jonathan E. Wyrick, Roy E. Murray, Michael D. Stewart, Richard M. Silver, Curt A. Richter
The key building block for devices based on the deterministic placement of dopants in silicon is the formation of phosphorus dopant monolayers and the overgrowth of high quality crystalline Si. Lithographically defined dopant delta-layers can be formed

Combining model-based measurement results of critical dimensions from multiple tools

April 7, 2017
Author(s)
Nien F. Zhang, Bryan M. Barnes, Hui Zhou, Mark Alexander Henn, Richard M. Silver
Model-based measurement techniques use experimental data and simulations of the underlying physics to extract quantitative estimates of the measurands of a specimen based upon a parametric model of that specimen. The uncertainties of these estimates are

Assessing the wavelength extensibility of optical patterned defect inspection

March 29, 2017
Author(s)
Bryan Barnes, Hui Zhou, Mark-Alexander Henn, Martin Sohn, Richard M. Silver
Qualitative comparisons have been made in the literature between the scattering off deep- subwavelength-sized defects and the scattering off spheres in free space to illustrate the challenges of optical defect inspection with decreasing patterning sizes

Imaging Optics and CCD Camera Characterization for Metrology

February 19, 2017
Author(s)
S Fox, Edward A. Kornegay, Richard M. Silver
Optical semiconductor characterization and metrology rely heavily on digital camera imaging and its associated optical imaging systems. This work characterizes the performance of a widely used, commercially available camera and compares its performance to