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Search Publications by: Richard M. Silver (Fed)

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Displaying 51 - 75 of 307

Imaging Optics and CCD Camera Characterization for Metrology

February 19, 2017
Author(s)
S Fox, Edward A. Kornegay, Richard M. Silver
Optical semiconductor characterization and metrology rely heavily on digital camera imaging and its associated optical imaging systems. This work characterizes the performance of a widely used, commercially available camera and compares its performance to

Atomically precise device fabrication

December 7, 2016
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Richard M. Silver, Curt A. Richter
An improved capacity to control matter at the atomic scale is central to the advancement of nanotechnology. The complementary metal-oxide-semiconductor (CMOS) devices that power existing computing technology, which continue to scale down in size as

Optimizing Subfield Targets for Nanoscale Quantitative Optical Imaging

September 29, 2016
Author(s)
Mark Alexander Henn, Bryan M. Barnes, Hui Zhou, Martin Y. Sohn, Richard M. Silver
The full 3-D scattered field above finite sets of features has been shown to contain a continuum of spatial frequency information, and with novel optical microscopy techniques and electromagnetic modeling, deep-subwavelength geometrical parameters can be

Enabling Quantitative Optical Imaging for In-die-capable Critical Dimension Targets

April 4, 2016
Author(s)
Bryan M. Barnes, Mark Alexander Henn, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Dimensional scaling trends will eventually bring the semiconductor critical dimensions (CDs) down to only a few atoms in width. New optical techniques are required to address intra-die variability for these CDs using sufficiently small in-die metrology

Silicon epitaxy on H-terminated Si (100) surfaces at 250deg C

March 31, 2016
Author(s)
Xiao Deng, Pradeep N. Namboodiri, Kai Li, Xiqiao Wang, Gheorghe Stan, Alline F. Myers, Xinbin Cheng, Tongbao Li, Richard M. Silver
Silicon on silicon growth at low temperatures has become increasing important due to its use to encapsulate buried nanoscale dopant devices. The performance of atomic scale devices is fundamentally affected by the quality of the silicon matrix in which the

Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression.

November 12, 2015
Author(s)
Mark Alexander Henn, Richard M. Silver, John S. Villarrubia, Nien F. Zhang, Hui Zhou, Bryan M. Barnes, Andras Vladar, Bin Ming
Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimates for

Deep-subwavelength Nanometric Image Reconstruction using Fourier Domain Optical Normalization

November 5, 2015
Author(s)
Jing Qin, Richard M. Silver, Bryan M. Barnes, Hui Zhou, Ronald G. Dixson, Mark Alexander Henn
Quantitative optical measurements of deep sub-wavelength, three-dimensional, nanometric structures with sensitivity to sub-nanometer details address an ubiquitous measurement challenge. A Fourier domain normalization approach is used in the Fourier optical

Quantitative tool characterization of a 193 nm scatterfield microscope

September 9, 2015
Author(s)
Martin Y. Sohn, Bryan M. Barnes, Hui Zhou, Richard M. Silver
Optical microscope tool characterization has been investigated for the quantitative measurements of deep sub-wavelength features using a Fourier plane normalization method. The NIST 193 nm scatterfield microscope operating with an ArF Excimer laser, which

Scatterfield Microscopy and the Fundamental Limits of Optical Defect Metrology

April 14, 2015
Author(s)
Richard M. Silver, Bryan M. Barnes, Martin Y. Sohn, Hui Zhou
Defect inspection remains a critical manufacturing challenge due to the competing requirements between throughput and very high resolution. Currently only optical methods provide an acceptable solution, although there are a number of process layers and

Optimizing Hybrid Metrology: Rigorous Implementation of Bayesian and Combined Regression

March 19, 2015
Author(s)
Mark Alexander Henn, Richard M. Silver, Nien F. Zhang, Hui Zhou, Bryan M. Barnes, Bin Ming, Andras Vladar, John S. Villarrubia
Hybrid metrology, e.g. the combination of several measurement techniques to determine critical dimensions, is an important approach to meet the needs of semiconductor industry. A proper use of hybrid metrology may not only yield more reliable estimates for