U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Curt A. Richter (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 1 - 25 of 475

Electron transport in bilayer graphene nanoconstrictions patterned using atomic force microscope nanolithography

March 20, 2025
Author(s)
Robert Rienstra, Nishat Sultana, En-Min Shih, Evan Stocker, Kenji Watanabe, Takashi Taniguchi, Curt Richter, Joseph Stroscio, Nikolai Zhitenev, Fereshte Ghahari Kermani
Here we report on low temperature transport measurements of encapsulated bilayer graphene nano constrictions fabricated employing electrode-free AFM-based local anodic oxidation (LAO) nanolithography. This technique allows for the creation of constrictions

High-endurance bulk CMOS one-transistor cryo-memory

February 28, 2025
Author(s)
Alexander Zaslavsky, Pragya Shrestha, Valery Ortiz Jimenez, Jason Campbell, Curt Richter
Previously we reported a compact one-transistor (1T) 180 nm bulk CMOS cryo-memory with a high 10^7 I_1/I_0 memory window and long 800 s retention time based on impact-ionization-induced charging of the transistor body. Here, we present the endurance and

Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements

February 27, 2023
Author(s)
Zhihui Cheng, Curt A. Richter, Hattan Abuzaid, Jonathan Backman, Mathieu Luisier, Huairuo Zhang, Albert Davydov, Guoqing Li, Yifei Yu, Linyou Cao, Aaron Franklin
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomic thin nature which withstands short channel effects and thus enables better scalability. Since improved scalability is the core advantage, both the channel

High-Resolution DNA Hybridization Kinetics Measurements with Double Gate FD-SOI Transistors

January 23, 2023
Author(s)
Seulki Cho, Alexander Zaslavsky, Curt A. Richter, Jacob Majikes, James Alexander Liddle, Francois Andrieu, Sylvain Barraud, Arvind Balijepalli
Double gate fully depleted SOI transistors operating in a remote gate configuration and under closed-loop feedback allow noise performance that exceeds their single gate counterparts by more than an order of magnitude. We leverage this high performance to

Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping

August 26, 2022
Author(s)
Siyuan Zhang, Hsun-Jen Chuang, SON LE, Curt A. Richter, Kathleen McCreary, Berend Jonker, Angela R. Hight Walker, Christina Hacker
The development of processes to controllably dope two-dimensional semiconductors is critical to achieving next generation electronic and optoelectronic devices. Understanding the nature of the contacts is a critical step for realizing efficient charge

How to Report and Benchmark Emerging Field-Effect Transistors

July 29, 2022
Author(s)
Zhihui Cheng, Chin-Sheng Pan, Peiqi Wang, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven Koester, Eric Pop, Aaron Franklin, Curt A. Richter
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of

High-performance dual-gate graphene pH sensors

June 28, 2022
Author(s)
Son Le, Seulki Cho, Alexander Zaslavsky, Curt A. Richter, Arvind Balijepalli
High precision biophysical measurements that are portable and performed without prior labeling of the molecules can greatly benefit several areas of biotechnology and biophysics, but existing techniques often lack sufficient resolution. Field-effect

Are 2D Interfaces Really Flat?

March 15, 2022
Author(s)
Zhihui Cheng, Huairuo Zhang, Son Le, Hattan Abuzaid, Guoqing Li, Yifei Yu, Albert Davydov, Linyou Cao, Aaron Franklin, Curt A. Richter
Two-dimensional (2D) materials are amenable to external mechanical deformation and thus forming bubbles and wrinkles. However, little is known about the dynamics of 2D interfaces, especially their flatness under different conditions. Here we use cross

Geometric interference in a high-mobility graphene annulus p-n junction device

January 10, 2022
Author(s)
Son Le, Albert Rigosi, Joseph Hagmann, Christopher Gutierrez, Ji Ung Lee, Curt A. Richter
The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the

Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

July 29, 2021
Author(s)
Alexander Zaslavsky, Curt A. Richter, Pragya Shrestha, Brian Hoskins, Son Le, Advait Madhavan, Jabez J. McClelland
Cryogenic operation of complementary metal oxide semiconductor (CMOS) silicon transistors is crucial for quantum information science, but it brings deviations from standard transistor operation. Here we report on sharp current jumps and stable hysteretic

Substrate-mediated hyperbolic phonon polaritons in MoO3

February 15, 2021
Author(s)
Jeffrey Schwartz, Son T. Le, Sergiy Krylyuk, Curt A. Richter, Albert Davydov, Andrea Centrone
Hyperbolic phonon polaritons (HPhPs) are hybrid excitations of light and coherent charge oscillations that exist in strongly optically anisotropic, two-dimensional materials (e.g., MoO3). These polaritons propagate through the material's volume with long