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Search Publications by: Curt A. Richter (Fed)

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Displaying 276 - 300 of 475

Flexible Solution-Processed Memristors

June 3, 2009
Author(s)
Nadine E. Gergel-Hackett, Behrang H. Hamadani, B Dunlap, John S. Suehle, Curt A. Richter, Christina A. Hacker, David J. Gundlach
We have fabricated physically flexible nonvolatile memory devices using inexpensive, room-temperature, solution processing. The behavior of these devices is consistent with that of a memristor device, the missing fourth circuit element theoretically

Ultrasmooth Gold as a Top Metal Electrode for Molecular Electronic Devices

April 7, 2009
Author(s)
Mariona Coll Bau, Christina A. Hacker, Lauren H. Miller, Daniel R. Hines, E. C. Williams, Curt A. Richter
In the emerging area of molecular electronics, fabrication of reliable metallic contacts remains one of the most critical challenges. Nanotransfer printing (nTP) is an attractive low-cost non-destructive technique to provide contact to organic monolayers

Test Chip to Evaluate Measurement Methods for Small Capacitances

March 30, 2009
Author(s)
Joseph J. Kopanski, Muhammad Y. Afridi, Chong Jiang, Curt A. Richter
We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal

Magnetic Tunnel Junctions with Self-Assembled Molecules

February 5, 2009
Author(s)
Wenyong Wang, Curt A. Richter
Molecular electronic devices with spin-dependent tunneling (SDT) transport behavior offer an innovative and extremely enticing direction towards spin electronics, both from fundamental and technological points of view. In this work, such molecular magnetic

Silicon Nanowire NVM Cell Using High-k Dielectric Charge Storage Layer

December 5, 2008
Author(s)
Xiaoxiao Zhu, Yang Yang, Qiliang Li, D. E. Ioannou, John S. Suehle, Curt A. Richter
Si nanowire (SiNW) channel non-volatile memory (NVM) cells were fabricated by a 'self-alignment' process. First, a layer of thermal SiO2 was grown on a silicon wafer by dry oxidation, and the SiNWs were then grown by chemical vapor deposition in pre

Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors

December 2, 2008
Author(s)
Lucile C. Teague, Behrang H. Hamadani, John E. Anthony, David J. Gundlach, James G. Kushmerick, Sanker Subramanian, Thomas Jackson, Curt A. Richter, Oana Jurchescu
We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device

Metrology for the Electrical Characterization of Semiconductor Nanowires

November 1, 2008
Author(s)
Curt A. Richter, Hao Xiong, Xiaoxiao Zhu, Wenyong Wang, Vincent M. Stanford, Woong-Ki Hong, Takhee Lee, D. E. Ioannou, Qiliang Li
Nanoelectronic devices based upon self-assembled semiconductor nanowires are excellent research tools for investigating the behavior of structures with sub-lithographic features as well as a promising basis for future information processing technologies

The Integration of Molecular Electronic Devices with Traditional CMOS Technologies

August 28, 2008
Author(s)
Nadine E. Gergel-Hackett, Askia A. Hill, Christina A. Hacker, Curt A. Richter
This work describes the development of hybrid circuits composed of silicon-based molecular electronic devices and traditional CMOS technology. In the development of these circuits, we first fabricated individual CMOS-compatible molecular electronic devices

Molecule induced interface states dominate charge transport in Si-alkyl-metal junctions

August 26, 2008
Author(s)
Lam H. Yu, Nadine E. Gergel-Hackett, Christopher D. Zangmeister, Christina A. Hacker, Curt A. Richter, James G. Kushmerick
Abstract. Semiconductor-molecule-metal junctions consisting of alkanethiol mono- layers self-assembled on both p+ and n¡ type highly doped Si(111)wires contacted with a 10 ¹m Au wire in a crossed-wire geometry are examined. Low temperature transport

Design, Fabrication, and Characterization of High-Performance Silicon Nanowire Transistors

August 1, 2008
Author(s)
Qiliang Li, Xiaoxiao Zhu, Yang Yang, D. E. Ioannou, Hao Xiong, John S. Suehle, Curt A. Richter
We report the fabrication and characterization of double-gated Si nanowire field effect transistors with excellent current-voltage characteristics, low subthreshold slope 85 mV/dec and high on/off current ratio 10^6. The Si nanowire devices are fabricated