U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Curt A. Richter (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 301 - 325 of 475

Design, Fabrication, and Characterization of High-Performance Silicon Nanowire Transistors

August 1, 2008
Author(s)
Qiliang Li, Xiaoxiao Zhu, Yang Yang, D. E. Ioannou, Hao Xiong, John S. Suehle, Curt A. Richter
We report the fabrication and characterization of double-gated Si nanowire field effect transistors with excellent current-voltage characteristics, low subthreshold slope 85 mV/dec and high on/off current ratio 10^6. The Si nanowire devices are fabricated

Measurements for the Reliability and Electrical Characterization of Semiconductor Nanowires

April 30, 2008
Author(s)
Curt A. Richter, Hao Xiong, Xiaoxiao Zhu, Wenyong Wang, Vincent M. Stanford, Qiliang Li, D. E. Ioannou, Woong-Ki Hong, Takhee Lee
Nanoelectronic devices based upon self-assembled semiconductor nanowires are excellent research tools for investigating the behavior of structures with sub-lithographic features as well as a promising basis for future information processing technologies

STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS

April 30, 2008
Author(s)
Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E. Ioannou, Curt A. Richter, Kin P. Cheung, John S. Suehle
A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2/SiO2

Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits

March 8, 2008
Author(s)
David J. Gundlach, James E. Royer, SK Park, Sankar Subramanian, Oana Jurchescu, Behrang H. Hamadani, Andrew Moad, Regis J. Kline, LC Teague, Oleg A. Kirillov, Curt A. Richter, Lee J. Richter, Sean R. Parkin, Thomas Jackson, JE Anthony
The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive

Contact Induced Crystallinity for High Performance Soluble Acene-Based TFTs

February 17, 2008
Author(s)
David J. Gundlach, James Royer, Behrang Hamadani, Lucile C. Teague, Andrew J. Moad, Oana Jurchescu, Oleg A. Kirillov, Lee J. Richter, James G. Kushmerick, Curt A. Richter, Sungkyu Park, Thomas Jackson, Sankar Subramanian, John E. Anthony
Organic electronics present a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. However, the lack of low-temperature low-cost deposition and patterning techniques limits the potential for the

Probing molecules in integrated solid-state silicon junctions

January 12, 2008
Author(s)
Wenyong Wang, Adina Scott, Nadine Gergel-Hackett, Christina Hacker, David Janes, Curt A. Richter
In this research work, we fabricate integrated Si-SAMs-metal devices using the ?soft? top metal deposition technique and probe their electronic properties with IETS characterizations. IETS confirmed the existence of molecular species in the device area.

Characterization of Electrically Active Defects in High-K Gate Dielectrics By Using Low Frequency Noise, Charge Pumping, and Fast Id-Vg measurements

September 30, 2007
Author(s)
Hao Xiong, Dawei Heh, Moshe Gurfinkel, Qiliang Li, Yoram Shapira, Curt A. Richter, Gennadi Bersuker, Choi Rino, John S. Suehle
The electrically active defects in High-k/SiO2 dielectric stacks are examined using a combination of low frequency noise (LFN), charge pumping (CP), and ultra fast Id-Vg methods. The volume trap profile in the stacks is obtained by modeling the drain

Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires

September 30, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Hao Xiong, Monica D. Edelstein, John S. Suehle, Xiaoxiao Zhu, D. E. Ioannou, Curt A. Richter
We report metrology methods to characterize nanowires. In this work, representative devices and test structures, including nanoelectromechanical switches, non-volatile nanowire memory devices with SONOS structure, and both transfer-length-method and Kelvin

The Characterization of Silicon-Based Molecular Devices

September 30, 2007
Author(s)
Nadine Gergel-Hackett, Christina Hacker, Lee J. Richter, Oleg A. Kirillov, Curt A. Richter
In order to realize molecular electronic (ME) technology, an intermediate integration with more traditional silicon-based technologies will likely be required. However, there has been little effort to develop the metrology needed to enable the fabrication

Distinguishing Between Nonlinear Channel Transport and Contact Effects in Organic FETs

August 30, 2007
Author(s)
Behrang Hamadani, Jeremy LeBoeuf, R J. Kline, Iain McCulloch, Martin Heeney, Curt A. Richter, Lee J. Richter, David J. Gundlach
We investigate charge injection and transport in organic field-effect transistors fabricated by using poly(2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. We show that in high mobility devices where the