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Search Publications by: Curt A. Richter (Fed)

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Displaying 176 - 200 of 239

Precise Alignment of single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures

March 1, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel
The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here we present a single nanowire manipulating system to precisely manipulate and align

Low-Frequency Noise Characterizations of ZnO Nanowires Field Effect Transistors

February 28, 2007
Author(s)
Wenyong Wang, Hao Xiong, Monica D. Edelstein, David J. Gundlach, John S. Suehle, Curt A. Richter, Woong-Ki Hong, Takhee Lee
Field effect transistors (FETs) of single-crystalline ZnO nanowires have been fabricated and low frequency (f) noise characterizations of the ZnO nanowire FETs have been performed for the first time. The obtained noise power spectra show a pronounced 1/f

Interface Characterization of Molecular-Monolayer/SiO2 Based Molecular Junctions

August 1, 2006
Author(s)
Curt A. Richter, Christina Hacker, Lee J. Richter, Oleg A. Kirillov, Eric M. Vogel
The properties of monolayers of molecules on thin SiO2 are of great interest for future hybrid Si-molecular device technologies. We present here a correlation of the results of dc-current-voltage (IV) and capacitance-voltage (CV) measurements with

Interface Characterization of Molecular-Monolayer/SiO2 Based Molecular Junctions

April 19, 2006
Author(s)
Curt A. Richter, Christina Hacker, Lee J. Richter, Oleg A. Kirillov, John S. Suehle, Eric M. Vogel
We present a correlation of the results of dc-current-voltage (IV) and ac-capacitance-voltage (CV) measurements with vibrational spectroscopy of Au/monolayer/SiO2/Si structures to establish an improved understanding of the interactions at the buried metal/

A Comparison of Thickness Values for Very Thin SiO2 Films by Using Ellipsometric, Capacitance-Voltage and HRTEM Measurements

January 3, 2006
Author(s)
James R. Ehrstein, Curt A. Richter, Deane Chandler-Horowitz, Eric M. Vogel, Chadwin Young, Shweta Shah, Dennis Maher, Brendan C. Foran, Alain C. Diebold
Abstract. A comparison study of very thin SiO2 film thickness values obtained from the three dominant measure-ment techniques used in the Integrated Circuit industry: ellipsometry, capacitance-voltage (C-V) measurements and transmission electron microscopy

Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors

December 1, 2005
Author(s)
Sang-Mo Koo, Qiliang Li, Monica D. Edelstein, Curt A. Richter, Eric M. Vogel
We report an approach to engineer the local band structure of silicon nanowire (SiNW) field-effect transistors (FETs) by using a dual-gated structure. In this device structure, by changing the local bandgap profile of the channel, the top-gate can suppress

Electrical and Spectroscopic Characterization of Metal/Monolayer/Si Devices

November 24, 2005
Author(s)
Curt A. Richter, Christina A. Hacker, Lee J. Richter
A simple technique for vibrational spectroscopy of metal/monolayer/silicon structures is applied to study the interaction of Au, Al, and Ti with alkane monolayers, either assembled onto thin oxides or directly attached to Si. The results are correlated

Variations in Semiconducting Polymer Microstructure and Hole Mobility With Spin-Coating Speed

November 15, 2005
Author(s)
Dean M. DeLongchamp, Brandon M. Vogel, Youngsuk Jung, Curt A. Richter, Oleg A. Kirillov, Jan Obrzut, Daniel A. Fischer, S Sambasivan, Marc Gurau, Lee J. Richter, Eric K. Lin
Organic semiconductors permit low-cost processing methods such as spin-coating, dip coating, or ink-jet printing onto flexible substrates. However, the performance of these materials in devices is difficult to control and new processing methods can deliver

Silicon Nanowires As Enhancement-mode Schottky-barrier Field-effect Transistors

June 29, 2005
Author(s)
Sang-Mo Koo, Monica D. Edelstein, Qiliang Li, Curt A. Richter, Eric M. Vogel
Silicon nanowire field-effect transistors (SiNWFETs) have been fabricated with a highly simplified integration scheme to function as Schottky barrier transistors and excellent enhancement-mode characteristics with high on/off current ratio 107 are

Nanometer Gaps in Gold Wires Are Formed By Thermal Migration

June 7, 2005
Author(s)
Ganesh K. Ramachandran, Monica D. Edelstein, David L. Blackburn, John S. Suehle, Eric M. Vogel, Curt A. Richter
The formation of gold wires separated by a few nanometers is reported. Such nanometer separated gaps are formed by ramping, at ambient conditions, a bias voltage across a thin gold wire until the wire breaks or fails. Externally heating the wire does not

Electrical Characterization of Al/AlOx/Molecule/Ti/Al Devices?

March 11, 2005
Author(s)
Curt A. Richter, D R. Stewart, D A. Ohlberg, R. S. Williams
We report experimental electrical characterization of Al/AlOx/Molecule/Ti/Al planar crossbar devices incorporating Langmuir-Blodgett organic monolayers of eicosanoic acid, fast-blue or chlorophyll-B. Current-voltage and capacitance-voltage measurements on

High Inversion Current in Silicon Nanowire Field Effect Transistors

November 30, 2004
Author(s)
Sang-Mo Koo, Jin-Ping Han, Eric M. Vogel, Curt A. Richter, J. Vahakangas, Akira Fujiwara
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional 'top-down?approach using electron-beam lithography. The SiNW device shows higher inversion channel current density than the