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Search Publications by: Curt A. Richter (Fed)

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Displaying 201 - 225 of 239

Structure and Chemical Characterization of Self-Assembled Mono-Fluoro-Substituted Oligo(phenylene-ethynlyene) Monolayers on Gold

June 22, 2004
Author(s)
Christina Hacker, James D. Batteas, J C. Garno, Manuel Marquez, Curt A. Richter, Lee J. Richter, Roger D. van Zee, Christopher D. Zangmeister
Monolayers of oligo(phenylene-ethynylene) (OPE) molecules have exhibited promise in molecular electronic test structures. This paper discusses films formed from novel molecules within this class, 2-fluoro-4-phenylethynyl-1-[(4-acetylthio)-phenylethynyl

Molecular Devices Formed by Direct Monolayer Attachment to Silicon

June 17, 2004
Author(s)
Curt A. Richter, Christina Hacker, Lee J. Richter, Eric M. Vogel
We present the results of studies of solution-based attachment of long-chain aliphatic molecules to hydrogen-terminated Si surfaces formed to determine the electrical properties of hybrid silicon-molecular nanoelectronic devices. We have applied an

Asymmetric Energy Distribution of Interface Traps in n- & p- MOSFETs with HfO2 Gate Dielectric on Ultra-thin SiON Buffer Layer

March 1, 2004
Author(s)
Jin-Ping Han, Eric M. Vogel, Evgeni Gusev, C. D'Emic, Curt A. Richter, Da-Wei Heh, John S. Suehle
The variable rise/fall-time charge pumping technique has been used to determine the energy distribution of interface trap density (Dit) in MOSFETs with HfO2 gate dielectric grown on ultra-thin (1-2 monolayer) SiON buffer layer on Si. Our results have

Comparative Thickness Measurements of SiO 2 /Si Films for Thickness Less than 10 nm

January 1, 2004
Author(s)
Terrence J. Jach, Joseph A. Dura, Nhan V. Nguyen, J R. Swider, G Cappello, Curt A. Richter
We report on a comparative measurement of SiO 2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were

Molecular Devices formed by Direct Monolayer Attachment to Silicon

December 10, 2003
Author(s)
Curt A. Richter, Christina A. Hacker, Lee J. Richter
We present the results of studies of solution-based attachment of long-chain aliphatic molecules to hydrogen-terminated Si surfaces formed to pursue the electrical properties of organic monolayers and as a first step towards creating hybrid silicon

Thickness Evaluation for 2nm SiO2 Films, a Comparison of Ellipsometric, Capacitance-Voltage and HRTEM Measurements

September 30, 2003
Author(s)
James R. Ehrstein, Curt A. Richter, Deane Chandler-Horowitz, Eric M. Vogel, Donnie R. Ricks, Chadwin Young, Steve Spencer, Shweta Shah, Dennis Maher, Brendan C. Foran, Alain C. Diebold, Pui-Yee Hung
We have completed a comparison of SiO2 film thicknesses obtained with the three dominant measurement techniques used in the IC industry . This work is directed at evaluating metrology capability that might support NIST- traceable Reference Materials for

Energy Distribution of Interface Traps in High-K Gated MOSFETs

June 1, 2003
Author(s)
Jin-Ping Han, Eric M. Vogel, Evgeni Gusev, C. D'Emic, Curt A. Richter, Da-Wei Heh, John S. Suehle
We use variable rise/fall-time charge pumping (CP) to determine the energy distribution of interface trap density (Dit) and capture cross-section of electrons/holes in high-k HfO2 gated nMOSFETs. Our results have revealed that the Dit is much higher in the

Metrology for Molecular Electronics

March 31, 2003
Author(s)
Curt A. Richter, D R. Stewart
We discuss some of the complex issues associated with the metrology of molecular electronic devices and describe an electrical characterization method to assess molecular crossbar devices. Experimental data is shown for an eicosanoic acid crossbar device

Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices

May 13, 2001
Author(s)
John S. Suehle, Eric M. Vogel, Monica D. Edelstein, Curt A. Richter, Nhan Van Nguyen, Igor Levin, Debra Kaiser, Hanchang F. Wu, J B. Bernstein
As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain a value of capacitance to reduce short-channel effects and to keep device drive current at an

Test Chip for Electrical Linewidth of Copper-Interconnection Features and Related Parameters

February 6, 2001
Author(s)
Michael W. Cresswell, N. Arora, Richard A. Allen, Christine E. Murabito, Curt A. Richter, Ashwani K. Gupta, Loren W. Linholm, D. Pachura, P. Bendix
This paper reports a new electrical test structure for measuring the barrier-layer thickness and total physical linewidth of copper-cored interconnect features. The test structure has four critical dimension (CD) reference segments of different drawn

A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators

January 1, 2001
Author(s)
Curt A. Richter, Allen R. Hefner Jr., Eric M. Vogel
We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar