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Search Publications by: James E. Maslar (Fed)

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Displaying 51 - 75 of 141

In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition

July 12, 2011
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling
Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical vapor

Raman spectroscopic observation of dehydrogenation in ball-milled LiNH2-LiBH4-MgH2 nanoparticles

April 3, 2010
Author(s)
Jason Hattrick-Simpers, Chun Chiu, James E. Maslar, Leonid A. Bendersky, Michael E. Niemann, Sesha S. Srinivasan, Elias K. Stefanakos
In situ Raman spectroscopy was used to monitor the dehydrogenation of ball-milled mixtures of LiNH2 LiBH4 MgH2 nanoparticles. The as-milled powders were found to contain a mixture of Li4BN3H10 and Mg(NH2)2, with no evidence of residual LiNH2 or LiBH4. It

Raman Spectroscopic Determination of Electron Concentration in n-Type GaSb

November 19, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room temperature as a function of electron concentration. These spectra were obtained using an optical system based on 752.55 nm excitation. Utilization of this wavelength permits

Raman Spectroscopic Determination of Hole Concentration in p-Type GaSb

January 2, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
Room temperature p-type GaSb bulk coupled mode spectra were measured as a function hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode

In Situ Gas Phase Diagnostics for Hafnium Oxide Atomic Layer Deposition

January 1, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, Donald R. Burgess Jr., William A. Kimes, Nhan V. Nguyen, Elizabeth F. Moore, Joseph T. Hodges
Atomic layer deposition (ALD) is an important method for depositing the nanometer-scale, conformal high  dielectric layers required for many nanoelectronics applications. In situ monitoring of ALD processes has the potential to yield insights that will

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Using Group VIII Metal Catalysts

November 13, 2007
Author(s)
Siddarth Sundaresan, Albert Davydov, Mark D. Vaudin, Igor Levin, James E. Maslar, Yong-lai Tian, M V. Rao
SiC nanowires are grown by a novel catalyst-assisted sublimation-sandwich (SS) method. This involves microwave heating-assisted physical vapor transport from a source 4H-SiC wafer to a closely positioned substrate 4H-SiC wafer. The substrate wafer is