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Search Publications by: James E. Maslar (Fed)

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Displaying 76 - 100 of 141

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Using Group VIII Metal Catalysts

November 13, 2007
Author(s)
Siddarth Sundaresan, Albert Davydov, Mark D. Vaudin, Igor Levin, James E. Maslar, Yong-lai Tian, M V. Rao
SiC nanowires are grown by a novel catalyst-assisted sublimation-sandwich (SS) method. This involves microwave heating-assisted physical vapor transport from a source 4H-SiC wafer to a closely positioned substrate 4H-SiC wafer. The substrate wafer is

Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths

October 1, 2007
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is important to

Tunable Ionic-Conductivity of Collapsed Sandia Octahedral Molecular Sieves (SOMS)

September 12, 2007
Author(s)
Jason D. Pless, Terry J. Garino, James E. Maslar, Tina M. Nenoff
The structure-property relationship between atomic cation substitution and bulk scale conductivity in perovskites has been studied systematically. A series of Na-Nb perovskites has been synthesized via two methods (1) ion-exchange or (2) synthetic metal

Local Structures and Raman Spectra in the Ca(Zr,Ti)O 3 Perovskite Solid Solutions

February 7, 2006
Author(s)
Igor Levin, Eric J. Cockayne, M W. Lufaso, Joseph C. Woicik, James E. Maslar
Local structures and cation distributions in perovskite Ca(Zr, Ti)O3 solid solutions were analyzed using X-ray absorption fine structure and pair-distribution functions obtained from total neutron scattering. The analyses revealed that the Zr-O and Ti-O

First-Order Raman Spectra of AB' 1/2 B'' 1/2 O 3 Double Perovskites

June 1, 2005
Author(s)
S A. Prosandeev, U Waghmare, Igor Levin, James E. Maslar
First principles computations of Raman intensities were performed for perovskite-like compound CaAl1/2Nb1/2O3 (CAN). This compound features 1:1 (NaCl-type) ordering of Al and Nb superimposed onto the b-b-c+ octahedral tilting. Raman tensor for CAN was

Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy

May 9, 2005
Author(s)
Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
The crystalline quality of bonded Silicon-On-Insulator (SOI) wafers were examined by spectroscopic ellipsometry and Raman spectroscopy. Both techniques detect slight structural defects in the SOI layer. If a pure crystalline silicon dielectric function is

Crystalline Quality of Bonded Silicon-On-Insulator Characterized by Spectroscopic Ellipsometry and Raman Spectroscopy

October 4, 2004
Author(s)
Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
The crystalline quality of Silicon-On-Insulator fabricated by a wafer bonding technique was examined by spectroscopic ellipsometry and Raman spectroscopy. The detailed modeling of the experimental ellipsometric data yields information about structural

Non-Contact Determination of Free Carrier Concentration in n-GaInAsSb

January 1, 2004
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang, D A. Shiau
GaSb-based semiconductors are of interest for mid-infrared optoelectronic and high-speed electronic devices. Accurate determination of electrical properties is essential for optimizing the performance of these devices. However, electrical characterization