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Search Publications by: Neil M. Zimmerman (Assoc)

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Displaying 76 - 100 of 161

An Upper Bound to the Frequency Dependence of the Cryogenic Vacuum-Gap Capacitor

September 6, 2006
Author(s)
Neil M. Zimmerman, Brian Simonds, Yicheng Wang
In attempting to develop a capacitance standard based on the charge of the electron, one question which has been open for many years is the frequency dependence of the vacuum-gap cryogenic capacitor. In this paper, we succeed in putting an upper bound on

Electrostatically gated Si devices: Coulomb blockade and barrier capacitance

August 10, 2006
Author(s)
Neil M. Zimmerman, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi
Using a new device resembling a nano-CCD, and measuring the Coulomb blockade, we identify a new parameter, the "barrier capacitance". We then show how this parameter can be used to learn about the underlying shape of the energy barrier under a gate with a

Sub-micron gap capacitor for measurement of breakdown voltage in air

March 24, 2006
Author(s)
Emmanouel S. Hourdakis, Brian Simonds, Neil M. Zimmerman
We have developed a new method for measuring the value of breakdown voltage in air for electrode separations from 400 nm to 45 'm. The electrodes used were thin film Au lines evaporated on sapphire. The resulting capacitors had an area of 80 'm by 80 'm

Single electron tunnelling transistor with tunable barriers using silicon nanowire MOSFET

March 7, 2006
Author(s)
Akira Fujiwara, Hiroshi Inokawa, Kenji Yamazaki, Hideo Namatsu, Yasuo Takahashi, Neil M. Zimmerman, Stuart Martin
Single-electron tunnelling (SET) transistors 1 are now of great and wide interest as basic elements for future applications such as low-power nanoelecronics 2 and read-out electrometer for solid-state quantum computing 3. Silicon SET devices 4 have great

Silicon-Based Tunable-Barrier Single Charge Sources

June 27, 2004
Author(s)
Neil M. Zimmerman
We have demonstrated the operation of, and are assessing theoretically and experimentally the error rates of, silicon-based single-electron turnstiles, pumps, and CCDs. These devices are conceptually very similar to the metal-based single-electron pumps

Current quantization due to single-electron transfer in Si-wire charge-coupled devices

February 23, 2004
Author(s)
Akira Fujiwara, Neil M. Zimmerman, Yukinori Ono, Yasuo Takahashi
We observe a quantized current due to single-electron transfer in a small charge-coupled device, which consists of a narrow Si-wire channel with fine gates; the gate is used to form a tunable barrier potential. By modulating two barrier potentials under

Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor

October 1, 2003
Author(s)
Yukinori Ono, Neil M. Zimmerman, Kenji Yamazaki, Yasuo Takahashi
A single-electron turnstile has been demonstrated using a silicon-based dual-gate single-electron transistor (SET). Each gate controls independently the closing and opening of the channel acting as the SET lead, which enables single-electron transfer

Electrical metrology with single electrons

July 16, 2003
Author(s)
Neil M. Zimmerman, Mark W. Keller
This paper is mostly a review of the progress made at NIST in pursuing a capacitance standard based on the charge of the electron. We briefly introduce the Coulomb blockade, which is the basic physical phenomenon allowing control of single electrons